JPS55133560A - Method of fabricating semiconductor element - Google Patents

Method of fabricating semiconductor element

Info

Publication number
JPS55133560A
JPS55133560A JP4013279A JP4013279A JPS55133560A JP S55133560 A JPS55133560 A JP S55133560A JP 4013279 A JP4013279 A JP 4013279A JP 4013279 A JP4013279 A JP 4013279A JP S55133560 A JPS55133560 A JP S55133560A
Authority
JP
Japan
Prior art keywords
pieces
crystal
type gaas
layer
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4013279A
Other languages
Japanese (ja)
Other versions
JPS6216548B2 (en
Inventor
Nobuhiko Fujine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4013279A priority Critical patent/JPS55133560A/en
Publication of JPS55133560A publication Critical patent/JPS55133560A/en
Publication of JPS6216548B2 publication Critical patent/JPS6216548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

PURPOSE:To prevent occurrence and increase of crystal defects in the semiconductor crystal formed in a plurality of semiconductor elements such as a Gunn diode, an IMPATT diode and the like and increase the yield of the semiconductor elements by dividing the semiconductor crystal into a plurality of pieces and plating heat dissipating metal on the back surfaces of the respective pieces. CONSTITUTION:A high resistance n-type GaAs operation layer 2 and a low resistance n-type GaAs layer 3 are sequentially epitaxially grown on an n-type GaAs substrate 1, Au.Ge or the like is coated on the surfaces of both the substrate 1 and the layer 3, respectively and alloyed to form ohmic electrodes 4, 5, respectively thereon. The entirety is scribed and divided into a plurality of pieces 11 to become, for example, Gunn diodes. The pieces 11 are aligned at suitable interval on a conductive film 12, and formed with plated heat sinks 13 on the back surfaces of the respective pieces 11 by an electrolytic plating process. When using the pieces 11, they may be separated from the conductive film. Thus, the stress applied to the crystal at radiator forming time is dispersed to the respective pieces and reduced so as to decrease the occurrence of crystal defects.
JP4013279A 1979-04-03 1979-04-03 Method of fabricating semiconductor element Granted JPS55133560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4013279A JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Publications (2)

Publication Number Publication Date
JPS55133560A true JPS55133560A (en) 1980-10-17
JPS6216548B2 JPS6216548B2 (en) 1987-04-13

Family

ID=12572272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4013279A Granted JPS55133560A (en) 1979-04-03 1979-04-03 Method of fabricating semiconductor element

Country Status (1)

Country Link
JP (1) JPS55133560A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078141A (en) * 1997-11-04 2000-06-20 Samsung Electronics Co., Ltd. Magnetron with improved vanes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946875A (en) * 1972-09-09 1974-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946875A (en) * 1972-09-09 1974-05-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078141A (en) * 1997-11-04 2000-06-20 Samsung Electronics Co., Ltd. Magnetron with improved vanes

Also Published As

Publication number Publication date
JPS6216548B2 (en) 1987-04-13

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