JPS5493355A - Device for having atomic or molecular flow source by solid material spattering principle - Google Patents

Device for having atomic or molecular flow source by solid material spattering principle

Info

Publication number
JPS5493355A
JPS5493355A JP10767378A JP10767378A JPS5493355A JP S5493355 A JPS5493355 A JP S5493355A JP 10767378 A JP10767378 A JP 10767378A JP 10767378 A JP10767378 A JP 10767378A JP S5493355 A JPS5493355 A JP S5493355A
Authority
JP
Japan
Prior art keywords
atomic
principle
solid material
flow source
molecular flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10767378A
Other languages
English (en)
Japanese (ja)
Inventor
Yakopitsuku Eeritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ELEKTRONENMIKROSKOPIE ZENTRUM
Original Assignee
ELEKTRONENMIKROSKOPIE ZENTRUM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ELEKTRONENMIKROSKOPIE ZENTRUM filed Critical ELEKTRONENMIKROSKOPIE ZENTRUM
Publication of JPS5493355A publication Critical patent/JPS5493355A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP10767378A 1977-09-05 1978-09-04 Device for having atomic or molecular flow source by solid material spattering principle Pending JPS5493355A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0635277A AT365857B (de) 1977-09-05 1977-09-05 Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien

Publications (1)

Publication Number Publication Date
JPS5493355A true JPS5493355A (en) 1979-07-24

Family

ID=3585458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10767378A Pending JPS5493355A (en) 1977-09-05 1978-09-04 Device for having atomic or molecular flow source by solid material spattering principle

Country Status (5)

Country Link
JP (1) JPS5493355A (enrdf_load_stackoverflow)
AT (1) AT365857B (enrdf_load_stackoverflow)
CH (1) CH637996A5 (enrdf_load_stackoverflow)
DD (1) DD138679A5 (enrdf_load_stackoverflow)
DE (1) DE2838676A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
JPS63241164A (ja) * 1987-03-30 1988-10-06 Toshiba Corp スパッタリングターゲットおよび電気配線用合金膜

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process

Also Published As

Publication number Publication date
ATA635277A (de) 1981-06-15
AT365857B (de) 1982-02-25
DD138679A5 (de) 1979-11-14
DE2838676C2 (enrdf_load_stackoverflow) 1990-08-30
CH637996A5 (en) 1983-08-31
DE2838676A1 (de) 1979-03-29

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