JPS5489492A - Optoelectronic sensor and method of fabricating same - Google Patents
Optoelectronic sensor and method of fabricating sameInfo
- Publication number
- JPS5489492A JPS5489492A JP15187478A JP15187478A JPS5489492A JP S5489492 A JPS5489492 A JP S5489492A JP 15187478 A JP15187478 A JP 15187478A JP 15187478 A JP15187478 A JP 15187478A JP S5489492 A JPS5489492 A JP S5489492A
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic sensor
- fabricating same
- fabricating
- same
- optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14862—CID imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772754549 DE2754549A1 (de) | 1977-12-07 | 1977-12-07 | Optoelektronischer sensor nach dem prinzip der ladungsinjektion |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5489492A true JPS5489492A (en) | 1979-07-16 |
JPS6226187B2 JPS6226187B2 (ja) | 1987-06-08 |
Family
ID=6025530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15187478A Granted JPS5489492A (en) | 1977-12-07 | 1978-12-07 | Optoelectronic sensor and method of fabricating same |
Country Status (6)
Country | Link |
---|---|
US (1) | US4266235A (ja) |
EP (1) | EP0003213B1 (ja) |
JP (1) | JPS5489492A (ja) |
CA (1) | CA1126843A (ja) |
DE (2) | DE2754549A1 (ja) |
IT (1) | IT1100522B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
US4568960A (en) * | 1980-10-23 | 1986-02-04 | Rockwell International Corporation | Blocked impurity band detectors |
FR2533371B1 (fr) * | 1982-09-21 | 1985-12-13 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
US7888200B2 (en) * | 2007-01-31 | 2011-02-15 | Sandisk 3D Llc | Embedded memory in a CMOS circuit and methods of forming the same |
US7868388B2 (en) * | 2007-01-31 | 2011-01-11 | Sandisk 3D Llc | Embedded memory in a CMOS circuit and methods of forming the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3995302A (en) * | 1973-05-07 | 1976-11-30 | Fairchild Camera And Instrument Corporation | Transfer gate-less photosensor configuration |
US4001861A (en) * | 1973-10-12 | 1977-01-04 | The United States Of America As Represented By The Secretary Of The Navy | Double-layer, polysilicon, two-phase, charge coupled device |
US4024562A (en) * | 1975-05-02 | 1977-05-17 | General Electric Company | Radiation sensing and charge storage devices |
US3988613A (en) * | 1975-05-02 | 1976-10-26 | General Electric Company | Radiation sensing and charge storage devices |
US3950188A (en) * | 1975-05-12 | 1976-04-13 | Trw Inc. | Method of patterning polysilicon |
DE2554638A1 (de) * | 1975-12-04 | 1977-06-16 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
DE2723933A1 (de) * | 1975-12-04 | 1978-06-01 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
US4134031A (en) * | 1977-09-19 | 1979-01-09 | Rca Corporation | Charge injection devices and arrays and systems including such devices |
-
1977
- 1977-12-07 DE DE19772754549 patent/DE2754549A1/de not_active Withdrawn
-
1978
- 1978-11-20 EP EP78101415A patent/EP0003213B1/de not_active Expired
- 1978-11-20 DE DE7878101415T patent/DE2862343D1/de not_active Expired
- 1978-11-22 US US05/962,893 patent/US4266235A/en not_active Expired - Lifetime
- 1978-12-01 IT IT30437/78A patent/IT1100522B/it active
- 1978-12-07 JP JP15187478A patent/JPS5489492A/ja active Granted
- 1978-12-07 CA CA317,556A patent/CA1126843A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2754549A1 (de) | 1979-06-13 |
JPS6226187B2 (ja) | 1987-06-08 |
EP0003213A2 (de) | 1979-08-08 |
IT1100522B (it) | 1985-09-28 |
EP0003213B1 (de) | 1983-10-26 |
EP0003213A3 (en) | 1979-09-05 |
US4266235A (en) | 1981-05-05 |
IT7830437A0 (it) | 1978-12-01 |
DE2862343D1 (en) | 1983-12-01 |
CA1126843A (en) | 1982-06-29 |
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