JPS5486481A - Production of metal oxide film - Google Patents
Production of metal oxide filmInfo
- Publication number
- JPS5486481A JPS5486481A JP15439077A JP15439077A JPS5486481A JP S5486481 A JPS5486481 A JP S5486481A JP 15439077 A JP15439077 A JP 15439077A JP 15439077 A JP15439077 A JP 15439077A JP S5486481 A JPS5486481 A JP S5486481A
- Authority
- JP
- Japan
- Prior art keywords
- substance
- nitrate
- oxide film
- metal
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
PURPOSE: To produce a metal oxide film of good quality at low temp. on a ground substance by electrodepositing desired metal ions formed in a low m.p. molten nitrate.
CONSTITUTION: Ground substance 1 as a cathode and carbon rod 2 as an anode are put in nitrate 3 contg. a desired metal ion source such as Sn(NO3)4 melted in electric furnace 6 and kept at a constant temp. A predetermined current is supplied between the electrodes from DC power source 5 to deposit metal ions formed in nitrate 3 on the surface of substance 1 by electrochemical reaction. The deposited metal is immediately oxidized with a number of NO-1 3 present around substance 1 to grow the metal as Sn2O3, etc. on substance 1. Nitrate 3 may be, e.g. a mixt. of 60 mol% of KNO3 with a m.p. of 134°C and 40 mol% of LiNO3. By this method, a metal oxide film of good quality can be formed at low temp., so formation of such a film is facilitated on a substance which tends to undergo thermal defects, e.g. a semiconductor, and a low m.p. substance.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15439077A JPS5486481A (en) | 1977-12-23 | 1977-12-23 | Production of metal oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15439077A JPS5486481A (en) | 1977-12-23 | 1977-12-23 | Production of metal oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5486481A true JPS5486481A (en) | 1979-07-10 |
| JPS568117B2 JPS568117B2 (en) | 1981-02-21 |
Family
ID=15583080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15439077A Granted JPS5486481A (en) | 1977-12-23 | 1977-12-23 | Production of metal oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5486481A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110347A (en) * | 1997-10-15 | 2000-08-29 | Canon Kabushiki Kashia | Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate |
-
1977
- 1977-12-23 JP JP15439077A patent/JPS5486481A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110347A (en) * | 1997-10-15 | 2000-08-29 | Canon Kabushiki Kashia | Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate |
| US6464762B1 (en) | 1997-10-15 | 2002-10-15 | Canon Kabushiki Kaisha | Aqueous solution for the formation of an indium oxide film by electroless deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS568117B2 (en) | 1981-02-21 |
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