JPS5484978A - Method of forming pattern - Google Patents

Method of forming pattern

Info

Publication number
JPS5484978A
JPS5484978A JP15309677A JP15309677A JPS5484978A JP S5484978 A JPS5484978 A JP S5484978A JP 15309677 A JP15309677 A JP 15309677A JP 15309677 A JP15309677 A JP 15309677A JP S5484978 A JPS5484978 A JP S5484978A
Authority
JP
Japan
Prior art keywords
forming pattern
pattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15309677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5724536B2 (enExample
Inventor
Tsukasa Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHO LSI GIJUTSU KENKYU KUMIAI
Priority to JP15309677A priority Critical patent/JPS5484978A/ja
Priority to US05/970,253 priority patent/US4268607A/en
Publication of JPS5484978A publication Critical patent/JPS5484978A/ja
Publication of JPS5724536B2 publication Critical patent/JPS5724536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
JP15309677A 1977-12-20 1977-12-20 Method of forming pattern Granted JPS5484978A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15309677A JPS5484978A (en) 1977-12-20 1977-12-20 Method of forming pattern
US05/970,253 US4268607A (en) 1977-12-20 1978-12-18 Method of patterning a resist layer for manufacture of a semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15309677A JPS5484978A (en) 1977-12-20 1977-12-20 Method of forming pattern

Publications (2)

Publication Number Publication Date
JPS5484978A true JPS5484978A (en) 1979-07-06
JPS5724536B2 JPS5724536B2 (enExample) 1982-05-25

Family

ID=15554875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15309677A Granted JPS5484978A (en) 1977-12-20 1977-12-20 Method of forming pattern

Country Status (2)

Country Link
US (1) US4268607A (enExample)
JP (1) JPS5484978A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271249A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd ポジ型高感度放射線感応性レジスト

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036615A1 (de) * 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von resiststrukturen
KR100613308B1 (ko) * 1998-09-10 2006-08-17 도레이 가부시끼가이샤 포지형 감방사선성 조성물
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US8592244B2 (en) 2011-07-25 2013-11-26 International Business Machines Corporation Pixel sensor cells and methods of manufacturing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344441A (en) * 1976-10-04 1978-04-21 Ibm Material for resist

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344441A (en) * 1976-10-04 1978-04-21 Ibm Material for resist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271249A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd ポジ型高感度放射線感応性レジスト

Also Published As

Publication number Publication date
JPS5724536B2 (enExample) 1982-05-25
US4268607A (en) 1981-05-19

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