JPS5724536B2 - - Google Patents
Info
- Publication number
- JPS5724536B2 JPS5724536B2 JP15309677A JP15309677A JPS5724536B2 JP S5724536 B2 JPS5724536 B2 JP S5724536B2 JP 15309677 A JP15309677 A JP 15309677A JP 15309677 A JP15309677 A JP 15309677A JP S5724536 B2 JPS5724536 B2 JP S5724536B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15309677A JPS5484978A (en) | 1977-12-20 | 1977-12-20 | Method of forming pattern |
| US05/970,253 US4268607A (en) | 1977-12-20 | 1978-12-18 | Method of patterning a resist layer for manufacture of a semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15309677A JPS5484978A (en) | 1977-12-20 | 1977-12-20 | Method of forming pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5484978A JPS5484978A (en) | 1979-07-06 |
| JPS5724536B2 true JPS5724536B2 (enExample) | 1982-05-25 |
Family
ID=15554875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15309677A Granted JPS5484978A (en) | 1977-12-20 | 1977-12-20 | Method of forming pattern |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4268607A (enExample) |
| JP (1) | JPS5484978A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3036615A1 (de) * | 1980-09-29 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von resiststrukturen |
| JPH087441B2 (ja) * | 1986-12-29 | 1996-01-29 | 凸版印刷株式会社 | ポジ型高感度放射線感応性レジスト |
| KR100613308B1 (ko) * | 1998-09-10 | 2006-08-17 | 도레이 가부시끼가이샤 | 포지형 감방사선성 조성물 |
| US6509134B2 (en) * | 2001-01-26 | 2003-01-21 | International Business Machines Corporation | Norbornene fluoroacrylate copolymers and process for the use thereof |
| US6730452B2 (en) * | 2001-01-26 | 2004-05-04 | International Business Machines Corporation | Lithographic photoresist composition and process for its use |
| US6548219B2 (en) * | 2001-01-26 | 2003-04-15 | International Business Machines Corporation | Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions |
| US8592244B2 (en) | 2011-07-25 | 2013-11-26 | International Business Machines Corporation | Pixel sensor cells and methods of manufacturing |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4011351A (en) * | 1975-01-29 | 1977-03-08 | International Business Machines Corporation | Preparation of resist image with methacrylate polymers |
| JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
| US4061829A (en) * | 1976-04-26 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Negative resist for X-ray and electron beam lithography and method of using same |
| US4096290A (en) * | 1976-10-04 | 1978-06-20 | International Business Machines Corporation | Resist mask formation process with haloalkyl methacrylate copolymers |
-
1977
- 1977-12-20 JP JP15309677A patent/JPS5484978A/ja active Granted
-
1978
- 1978-12-18 US US05/970,253 patent/US4268607A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5484978A (en) | 1979-07-06 |
| US4268607A (en) | 1981-05-19 |