JPS5475288A - Diode capable of generating and detecting light - Google Patents
Diode capable of generating and detecting lightInfo
- Publication number
- JPS5475288A JPS5475288A JP13720678A JP13720678A JPS5475288A JP S5475288 A JPS5475288 A JP S5475288A JP 13720678 A JP13720678 A JP 13720678A JP 13720678 A JP13720678 A JP 13720678A JP S5475288 A JPS5475288 A JP S5475288A
- Authority
- JP
- Japan
- Prior art keywords
- generating
- detecting light
- diode capable
- diode
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
- H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7733354A FR2408222A1 (fr) | 1977-11-07 | 1977-11-07 | Diode emettrice et receptrice de rayons lumineux de meme longueur d'onde predeterminee et dispositif de telecommunication optique utilisant une telle diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5475288A true JPS5475288A (en) | 1979-06-15 |
JPS6244714B2 JPS6244714B2 (ja) | 1987-09-22 |
Family
ID=9197316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13720678A Granted JPS5475288A (en) | 1977-11-07 | 1978-11-07 | Diode capable of generating and detecting light |
Country Status (6)
Country | Link |
---|---|
US (1) | US4217597A (ja) |
EP (1) | EP0001952B1 (ja) |
JP (1) | JPS5475288A (ja) |
CA (1) | CA1121490A (ja) |
DE (1) | DE2860308D1 (ja) |
FR (1) | FR2408222A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60230329A (ja) * | 1984-04-27 | 1985-11-15 | オプテツクス株式会社 | 赤外線式光電スイツチ |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3046140A1 (de) * | 1980-12-06 | 1982-07-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens" |
EP0096509A3 (en) * | 1982-06-09 | 1986-02-26 | National Research Development Corporation | Electroluminescent devices |
FR2724769B1 (fr) * | 1994-09-16 | 1996-12-06 | Thomson Csf | Procede de realisation de diodes laser a emission surfacique |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105283A (en) * | 1974-05-28 | 1976-09-17 | Thomson Csf | Kotaihatsuko jukososhi |
JPS53116792A (en) * | 1977-03-23 | 1978-10-12 | Toshiba Corp | Semiconductor light emitting-photo detecting composite device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2175571B1 (ja) * | 1972-03-14 | 1978-08-25 | Radiotechnique Compelec | |
US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
FR2275078A1 (fr) * | 1974-06-14 | 1976-01-09 | Thomson Csf | Systeme de telecommunications optiques bidirectionnelles |
JPS51146196A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode laser |
-
1977
- 1977-11-07 FR FR7733354A patent/FR2408222A1/fr active Granted
-
1978
- 1978-10-27 DE DE7878400155T patent/DE2860308D1/de not_active Expired
- 1978-10-27 EP EP78400155A patent/EP0001952B1/fr not_active Expired
- 1978-10-31 CA CA000315358A patent/CA1121490A/en not_active Expired
- 1978-11-02 US US05/957,196 patent/US4217597A/en not_active Expired - Lifetime
- 1978-11-07 JP JP13720678A patent/JPS5475288A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105283A (en) * | 1974-05-28 | 1976-09-17 | Thomson Csf | Kotaihatsuko jukososhi |
JPS53116792A (en) * | 1977-03-23 | 1978-10-12 | Toshiba Corp | Semiconductor light emitting-photo detecting composite device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60230329A (ja) * | 1984-04-27 | 1985-11-15 | オプテツクス株式会社 | 赤外線式光電スイツチ |
Also Published As
Publication number | Publication date |
---|---|
DE2860308D1 (en) | 1981-02-19 |
EP0001952B1 (fr) | 1980-12-10 |
US4217597A (en) | 1980-08-12 |
JPS6244714B2 (ja) | 1987-09-22 |
FR2408222B1 (ja) | 1980-04-25 |
EP0001952A3 (en) | 1979-05-30 |
CA1121490A (en) | 1982-04-06 |
FR2408222A1 (fr) | 1979-06-01 |
EP0001952A2 (fr) | 1979-05-16 |
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