JPS5469989A - Solid laser device - Google Patents
Solid laser deviceInfo
- Publication number
- JPS5469989A JPS5469989A JP13697877A JP13697877A JPS5469989A JP S5469989 A JPS5469989 A JP S5469989A JP 13697877 A JP13697877 A JP 13697877A JP 13697877 A JP13697877 A JP 13697877A JP S5469989 A JPS5469989 A JP S5469989A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- materials
- disposed
- light
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
Abstract
PURPOSE:To constitute a laser resonator by serially laminating and arraying plural semiconductor elements to form an exciting light source and optically coupling the two solid laser materials disposed with these in-between. CONSTITUTION:Plural semiconductor laser elements 11 are laminated and arrayed, and a forward bias is applied from a power source 12 in series to respective pn junctions. Solid laser materials 2 such as Ndp5O14 crystal are so disposed as to sandwich the semiconductor laser element array 1 and are excited by receiving the laser output light from both side faces of the array 1. A full reflecting mirror 31 and semi-transparent mirror 32 are coated on the end face of the materials 2 and a coupler 4 is disposed on the other side face side to optically couple the materials 2, thereby constituting the laser resonator. The light having been excited by the array 1 and generated in the materials 2 is amplified by reciprocating plural times in the U-shaped optical path and is drawn out as large output laser light from the mirror 32.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13697877A JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13697877A JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5469989A true JPS5469989A (en) | 1979-06-05 |
JPS6136399B2 JPS6136399B2 (en) | 1986-08-18 |
Family
ID=15187904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13697877A Granted JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469989A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04174577A (en) * | 1990-01-19 | 1992-06-22 | Mitsubishi Electric Corp | Semiconductor-excited solid-state laser |
EP0665616A1 (en) * | 1994-01-28 | 1995-08-02 | Thomson-Csf Semiconducteurs Specifiques | High power two-stage laser |
JP2002280674A (en) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | Semiconductor light emitting device and its manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6395700U (en) * | 1986-12-09 | 1988-06-20 |
-
1977
- 1977-11-15 JP JP13697877A patent/JPS5469989A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04174577A (en) * | 1990-01-19 | 1992-06-22 | Mitsubishi Electric Corp | Semiconductor-excited solid-state laser |
EP0665616A1 (en) * | 1994-01-28 | 1995-08-02 | Thomson-Csf Semiconducteurs Specifiques | High power two-stage laser |
FR2715776A1 (en) * | 1994-01-28 | 1995-08-04 | Thomson Csf Semiconducteurs | Two-stage high-power laser. |
US5570387A (en) * | 1994-01-28 | 1996-10-29 | Thomson-Csf Semiconducteurs Specifiques | Two-stage power laser |
JP2002280674A (en) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | Semiconductor light emitting device and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS6136399B2 (en) | 1986-08-18 |
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