JPS6136399B2 - - Google Patents
Info
- Publication number
- JPS6136399B2 JPS6136399B2 JP13697877A JP13697877A JPS6136399B2 JP S6136399 B2 JPS6136399 B2 JP S6136399B2 JP 13697877 A JP13697877 A JP 13697877A JP 13697877 A JP13697877 A JP 13697877A JP S6136399 B2 JPS6136399 B2 JP S6136399B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- semiconductor laser
- laser
- element array
- state laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
この発明は半導体レーザを励起光源として用い
る固体レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state laser device that uses a semiconductor laser as an excitation light source.
固体レーザは気体レーザに比べて小型で大出力
が得られるが、励起源として通常Xeランプ等の
放電管を用いるため、pn接合を利用して励起を
行う半導体レーザに比べると大型にならざるを得
なかつた。しかし、半導体レーザでは未だ固体レ
ーザほどの大出力が得られないし、またコヒーレ
ンスも固体レーザに比べて劣つている。 Solid-state lasers are smaller than gas lasers and can provide high output, but because they usually use a discharge tube such as a Xe lamp as an excitation source, they have to be larger than semiconductor lasers that use p-n junctions for excitation. I didn't get it. However, semiconductor lasers still cannot provide as large an output as solid-state lasers, and their coherence is also inferior to that of solid-state lasers.
この発明は上記した点に鑑みてなされたもの
で、半導体レーザを励起光源として用いることで
大幅な小型化を図り、かつコヒーレンスの優れた
大出力レーザを得ることを可能とした固体レーザ
装置を提供するものである。 This invention has been made in view of the above-mentioned points, and provides a solid-state laser device that uses a semiconductor laser as an excitation light source to achieve significant miniaturization and also makes it possible to obtain a high-output laser with excellent coherence. It is something to do.
この発明に係る固体レーザ装置は、複数個の半
導体レーザ素子を直列に積層配列して励起光源と
し、この半導体レーザ素子アレイを挾んで配置し
た2個の固体レーザ物質を光学的に結合してレー
ザ共振器を構成したことを特徴としている。 The solid-state laser device according to the present invention uses a plurality of semiconductor laser elements stacked in series to serve as an excitation light source, and optically couples two solid-state laser substances arranged sandwiching the semiconductor laser element array to generate a laser beam. It is characterized by having a resonator structure.
以下、この発明の実施例を図面を参照して説明
する。第1図は一実施例の摸式的な分解斜視図で
ある。図において、1は励起光源としての光導体
レーザ素子アレイであり、より具体的には第2図
に示すように複数個の半導体レーザ素子111,
112…11nを積層配列し、各pn接合に直列
に電源12から順方向バイアスを印加するように
なつている。21,22は例えばNdP5O14結晶の
ような固体レーザ物質であり、半導体レーザ素子
アレイ1を挾むように配置され、半導体レーザ素
子アレイ1の両側面からのレーザ出力光を受けて
励起されるようになつている。一方の固体レーザ
物質21の一端面には全反射ミラー31がコーテ
イングされ、他方の固体レーザ物質22の一端面
には半透明ミラー32がコーテイングされてい
る。そして、これらの固体レーザ物質21,22
の他端面側には例えばLiTaO3,LiNdO3,KDP,
ADPなどの電気光学結晶からなる結合器4を配
置し、固体レーザ物質21,22を光学的に結合
してレーザ共振器を構成している。即ち、半導体
レーザ素子アレイ1によつて励起され固体レーザ
物質21,22内に発生した光は全反射ミラー3
1と半透明ミラー32の間を、固体レーザ物質2
1―結合器4―固体レーザ物質22を通る略コの
字状の光路をとつて多数回往復して増幅され、半
透明ミラー32から大出力レーザ光として取出さ
れる。51,52は熱良導体からなるヒートシン
クであり、固体レーザ物質21,22、半導体レ
ーザ素子アレイ1、結合器4を上下から密着させ
て挾み込んで固定する。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic exploded perspective view of one embodiment. In the figure, 1 is a light guide laser element array as an excitation light source, and more specifically, as shown in FIG. 2, a plurality of semiconductor laser elements 11 1 ,
11 2 . . . 11n are arranged in a stacked manner, and a forward bias is applied in series from a power supply 12 to each pn junction. 2 1 and 2 2 are solid laser materials such as NdP 5 O 14 crystals, which are arranged to sandwich the semiconductor laser element array 1 and are excited by receiving laser output light from both sides of the semiconductor laser element array 1. It is becoming more and more common. One end surface of one solid-state laser material 21 is coated with a total reflection mirror 31 , and one end surface of the other solid-state laser material 22 is coated with a semi-transparent mirror 32 . And these solid-state laser materials 2 1 , 2 2
For example, LiTaO 3 , LiNdO 3 , KDP,
A coupler 4 made of electro-optic crystal such as ADP is arranged, and the solid-state laser materials 2 1 and 2 2 are optically coupled to form a laser resonator. That is, the light excited by the semiconductor laser element array 1 and generated within the solid-state laser materials 2 1 and 2 2 is reflected by the total reflection mirror 3.
1 and the semi-transparent mirror 3 2 , the solid laser material 2
1 - Coupler 4 - Solid-state laser material 2 2 A substantially U-shaped optical path is taken, and the light is amplified by going back and forth many times, and then extracted from a semi-transparent mirror 32 as a high-output laser beam. Reference numerals 5 1 and 5 2 are heat sinks made of good thermal conductors, and the solid-state laser materials 2 1 and 2 2 , the semiconductor laser element array 1, and the coupler 4 are tightly sandwiched and fixed from above and below.
このような構成とすれば、励起源として半導体
レーザ素子アレイを用いるから、例えば従来のフ
ラツシユランプを用いる固体レーザに比べて極め
てコンパクトになる。しかも、半導体レーザ素子
アレイの両光出力端面に対向させて2個の固体レ
ーザ物質を配置し、これらを光学的に結合してレ
ーザ共振器を構成するため、効率よく大出力レー
ザ光を得ることができる。また、結合器を単なる
光の結合器に止まらず変調器として利用すること
も容易であり、所望の変調をかけたレーザ出力を
得ることができる。 With such a configuration, since a semiconductor laser element array is used as an excitation source, it becomes extremely compact compared to, for example, a conventional solid-state laser that uses a flash lamp. Moreover, since two solid-state laser materials are placed opposite to both optical output end faces of the semiconductor laser element array and are optically coupled to form a laser resonator, it is possible to efficiently obtain high-output laser light. I can do it. Further, the coupler can be easily used not only as a simple optical coupler but also as a modulator, and a laser output with desired modulation can be obtained.
また、21,4,4,22との間の光結合が光
学的損失が最少になるようブリユースター角度に
カツトした固体レーザ物質と結合器とを採用する
ことができる。 Furthermore, it is possible to employ a solid-state laser material and a coupler that are cut at the Brewster angle so that the optical coupling between 2 1 , 4 , 4 , and 2 2 minimizes optical loss.
第1図はこの発明の一実施例を摸式的に示す分
解斜視図、第2図は半導体レーザ素子アレイの構
成を示す図である。
1……半導体レーザ素子アレイ、111,11
2…11o……半導体レーザ素子、12……電
源、31,32……固体レーザ物質、4……結合
器、51,52……ヒートシンク。
FIG. 1 is an exploded perspective view schematically showing an embodiment of the present invention, and FIG. 2 is a diagram showing the configuration of a semiconductor laser element array. 1... Semiconductor laser element array, 11 1 , 11
2 ... 11 o ... semiconductor laser element, 12 ... power supply, 3 1 , 3 2 ... solid-state laser material, 4 ... coupler, 5 1 , 5 2 ... heat sink.
Claims (1)
ーザ素子を、それぞれの光出力端面の方向を揃え
て複数個配列した半導体レーザ素子アレイからな
る励起光源と、前記半導体レーザ素子アレイの光
出力端面と対向するように前記励起光源を挾んで
配置した2個の固体レーザ物質と、この2個の固
体レーザ物質を光学的に結合する結合器とを有す
ることを特徴とする固体レーザ装置。 an excitation light source consisting of a semiconductor laser element array in which a plurality of semiconductor laser elements each having a light output end face on both end faces are arranged with the directions of the light output facets aligned; and a pumping light source that faces the light output end face of the semiconductor laser element array. A solid-state laser device comprising two solid-state laser materials disposed with the excitation light source sandwiched therebetween, and a coupler for optically coupling the two solid-state laser materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13697877A JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13697877A JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5469989A JPS5469989A (en) | 1979-06-05 |
| JPS6136399B2 true JPS6136399B2 (en) | 1986-08-18 |
Family
ID=15187904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13697877A Granted JPS5469989A (en) | 1977-11-15 | 1977-11-15 | Solid laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5469989A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395700U (en) * | 1986-12-09 | 1988-06-20 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3091764B2 (en) * | 1990-01-19 | 2000-09-25 | 三菱電機株式会社 | Semiconductor pumped solid-state laser |
| FR2715776B1 (en) * | 1994-01-28 | 1996-03-01 | Thomson Csf Semiconducteurs | High power two-stage laser. |
| JP3790677B2 (en) * | 2001-03-19 | 2006-06-28 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
-
1977
- 1977-11-15 JP JP13697877A patent/JPS5469989A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395700U (en) * | 1986-12-09 | 1988-06-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5469989A (en) | 1979-06-05 |
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