JPS54587A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54587A
JPS54587A JP6554577A JP6554577A JPS54587A JP S54587 A JPS54587 A JP S54587A JP 6554577 A JP6554577 A JP 6554577A JP 6554577 A JP6554577 A JP 6554577A JP S54587 A JPS54587 A JP S54587A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor substrate
same semiconductor
obtain stable
darlington transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6554577A
Other languages
Japanese (ja)
Inventor
Masashi Jinmon
Yasuo Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6554577A priority Critical patent/JPS54587A/en
Publication of JPS54587A publication Critical patent/JPS54587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain stable performances over a wide temperature range by providing resistors having a negative temperature coefficient across respective resistances of a Darlington transistor, on the same semiconductor substrate.
JP6554577A 1977-06-02 1977-06-02 Semiconductor device Pending JPS54587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6554577A JPS54587A (en) 1977-06-02 1977-06-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6554577A JPS54587A (en) 1977-06-02 1977-06-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54587A true JPS54587A (en) 1979-01-05

Family

ID=13290084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6554577A Pending JPS54587A (en) 1977-06-02 1977-06-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676679A (en) * 1984-12-28 1987-06-30 Canon Kabushiki Kaisha Recording apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676679A (en) * 1984-12-28 1987-06-30 Canon Kabushiki Kaisha Recording apparatus

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