JPS5455349A - Transistor amplifier - Google Patents

Transistor amplifier

Info

Publication number
JPS5455349A
JPS5455349A JP12325077A JP12325077A JPS5455349A JP S5455349 A JPS5455349 A JP S5455349A JP 12325077 A JP12325077 A JP 12325077A JP 12325077 A JP12325077 A JP 12325077A JP S5455349 A JPS5455349 A JP S5455349A
Authority
JP
Japan
Prior art keywords
unbalance
chips
unstableness
oscillation
currents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12325077A
Other languages
Japanese (ja)
Inventor
Yoshiteru Saito
Seizo Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12325077A priority Critical patent/JPS5455349A/en
Publication of JPS5455349A publication Critical patent/JPS5455349A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent completely the unstableness of oscillation, etc., when operating several transistor chips in parallel, by enabling an unbalance absorption circuit to absorb unbalance components of voltages and currents among respective chips over the wide range. CONSTITUTION:In the Tr amplifier constituted by sealing transistor chips 1 and 1' operating in parallel and input-side and output-side impedance matcher circuits 4 and 4', and 5 and 5' in one airtight case at the input side and output side of those chips 1 and 1', transmission lines 8 and 8', and 10 and 10' which have appropriate characteristic impedance values and 1/10 wavelength or more in the inuse frequency band are matcher circuits 4 and 4', and 5 and 5' at the input side and output side. In addition, unbalance absorbing resistors 9 and 11 are connected between transmission lines 8 and 8', and 10 and 10'. Then, unbalance components of voltages and currents between Trs 4 and 4', and 5 and 5' are absorbed over the wide band, thereby preventing completely the unstableness of oscillation, etc.
JP12325077A 1977-10-13 1977-10-13 Transistor amplifier Pending JPS5455349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12325077A JPS5455349A (en) 1977-10-13 1977-10-13 Transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12325077A JPS5455349A (en) 1977-10-13 1977-10-13 Transistor amplifier

Publications (1)

Publication Number Publication Date
JPS5455349A true JPS5455349A (en) 1979-05-02

Family

ID=14855912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12325077A Pending JPS5455349A (en) 1977-10-13 1977-10-13 Transistor amplifier

Country Status (1)

Country Link
JP (1) JPS5455349A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386904A (en) * 1986-09-30 1988-04-18 Toshiba Corp Internal matching type high output field effect transistor
JPS63197346A (en) * 1987-02-12 1988-08-16 Hitachi Ltd High-frequency semiconductor device
JPS63253708A (en) * 1987-04-10 1988-10-20 Mitsubishi Electric Corp Microwave power synthesizing fet amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386904A (en) * 1986-09-30 1988-04-18 Toshiba Corp Internal matching type high output field effect transistor
JPS63197346A (en) * 1987-02-12 1988-08-16 Hitachi Ltd High-frequency semiconductor device
JPS63253708A (en) * 1987-04-10 1988-10-20 Mitsubishi Electric Corp Microwave power synthesizing fet amplifier

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