JPS5448185A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5448185A JPS5448185A JP11483677A JP11483677A JPS5448185A JP S5448185 A JPS5448185 A JP S5448185A JP 11483677 A JP11483677 A JP 11483677A JP 11483677 A JP11483677 A JP 11483677A JP S5448185 A JPS5448185 A JP S5448185A
- Authority
- JP
- Japan
- Prior art keywords
- reflector
- light
- constitution
- junction surface
- reflecting means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
- H01S3/1075—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect for optical deflection
Abstract
PURPOSE:To ensure an independent operation between the laser oscillation and modulation by installing a pair of reflecting means to form the optical resonator for the semiconductor laser device and then adding the converter which changes the deflecting state by the external application signal between the semiconductor active regions provided between the reflecting means. CONSTITUTION:In case no field is applied to electro-optical element 5, the transmission light receives no deflecting conversion at all. Thus, the laser of such constitution oscillates with the light of the TE-mode, and at the same time the linear polarized light whose field direction is parallel to the junction surface is emitted from reflector 4. On the other hand, when the field is applied to element 5 via signal source 6, the light of the TE-mode going to reflector 4 from luminous element 1 undergoes the polarizing conversion via element 5 to reach reflector 4 in the form of the linear polarized light whose field direction is polarized vertically to the junction surface. The greater part of the light is drawn out through reflector 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11483677A JPS5448185A (en) | 1977-09-22 | 1977-09-22 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11483677A JPS5448185A (en) | 1977-09-22 | 1977-09-22 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5448185A true JPS5448185A (en) | 1979-04-16 |
Family
ID=14647903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11483677A Pending JPS5448185A (en) | 1977-09-22 | 1977-09-22 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5448185A (en) |
-
1977
- 1977-09-22 JP JP11483677A patent/JPS5448185A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR850003223A (en) | Solidified Optical Interferometer | |
| GB1363143A (en) | Polarization independent light modulation means using birefringent crystals | |
| GB1406496A (en) | Optical devices | |
| KR930015207A (en) | Atomic frequency standard | |
| DE69312773T2 (en) | Adjustable polarization converter | |
| JPS6254991A (en) | Semiconductor laser | |
| US5384799A (en) | Frequency stabilized laser with electronic tunable external cavity | |
| JPS5448185A (en) | Semiconductor laser device | |
| DE69006518T2 (en) | Semiconductor laser amplifier. | |
| JPS60207389A (en) | Semiconductor laser device | |
| US3462711A (en) | Electro-optic diode modulators | |
| FR2337449A1 (en) | Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler | |
| JPS6461724A (en) | Optical isolator | |
| JPS57124490A (en) | Coupler for semiconductor laser and optical fiber | |
| JPH05297233A (en) | Monitor structure of light waveguide module | |
| JPS5357985A (en) | Injection type laser device | |
| JPS57111512A (en) | Coupling device of semiconductor laser to optical fiber | |
| JPS56150885A (en) | Oscillating frequency stabilized semiconductor laser device | |
| JPS5664487A (en) | Light transmitting section | |
| JPS55163888A (en) | Wavelength multiplex semiconductor laser device | |
| JPS63129682A (en) | Semiconductor laser device | |
| JP2001117128A (en) | Wavelength conversion element | |
| JPS57143887A (en) | Semiconductor laser | |
| JPH02395A (en) | Semiconductor laser device and wave-length changing type ultrashort light pulse generator | |
| Garmire | The Emerging Technology In Opto-Electronics |