JPS5443996B2 - - Google Patents
Info
- Publication number
- JPS5443996B2 JPS5443996B2 JP13769675A JP13769675A JPS5443996B2 JP S5443996 B2 JPS5443996 B2 JP S5443996B2 JP 13769675 A JP13769675 A JP 13769675A JP 13769675 A JP13769675 A JP 13769675A JP S5443996 B2 JPS5443996 B2 JP S5443996B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742454110 DE2454110A1 (de) | 1974-11-14 | 1974-11-14 | Verfahren zur herstellung von einkristallinem galliumarsenid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5172998A JPS5172998A (https=) | 1976-06-24 |
| JPS5443996B2 true JPS5443996B2 (https=) | 1979-12-22 |
Family
ID=5930859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13769675A Expired JPS5443996B2 (https=) | 1974-11-14 | 1975-11-14 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5443996B2 (https=) |
| DE (1) | DE2454110A1 (https=) |
| FR (1) | FR2290947A1 (https=) |
| GB (1) | GB1495800A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2097695B (en) * | 1981-03-24 | 1984-08-22 | Mitsubishi Monsanto Chem | Method for producing a single crystal |
| US4946543A (en) * | 1986-06-02 | 1990-08-07 | Kalisher Murray H | Method and apparatus for growing films on a substrate |
| CN119710296B (zh) * | 2025-03-01 | 2025-06-27 | 中南大学 | 含砷危废料提取制备高纯砷的方法及装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5210116A (en) * | 1975-07-15 | 1977-01-26 | Hitachi Ltd | Magnetized memory reading device |
-
1974
- 1974-11-14 DE DE19742454110 patent/DE2454110A1/de active Pending
-
1975
- 1975-11-13 GB GB46886/75A patent/GB1495800A/en not_active Expired
- 1975-11-13 FR FR7534604A patent/FR2290947A1/fr active Granted
- 1975-11-14 JP JP13769675A patent/JPS5443996B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1495800A (en) | 1977-12-21 |
| DE2454110A1 (de) | 1976-05-20 |
| JPS5172998A (https=) | 1976-06-24 |
| FR2290947A1 (fr) | 1976-06-11 |
| FR2290947B1 (https=) | 1978-05-12 |