GB1495800A - Manufacture of monocrystalline gallium arsenide - Google Patents
Manufacture of monocrystalline gallium arsenideInfo
- Publication number
- GB1495800A GB1495800A GB46886/75A GB4688675A GB1495800A GB 1495800 A GB1495800 A GB 1495800A GB 46886/75 A GB46886/75 A GB 46886/75A GB 4688675 A GB4688675 A GB 4688675A GB 1495800 A GB1495800 A GB 1495800A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gallium
- arsenic
- heating
- temperature
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 6
- 229910052785 arsenic Inorganic materials 0.000 abstract 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 6
- 229910052733 gallium Inorganic materials 0.000 abstract 6
- 238000010438 heat treatment Methods 0.000 abstract 5
- 238000001816 cooling Methods 0.000 abstract 3
- 239000003708 ampul Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742454110 DE2454110A1 (de) | 1974-11-14 | 1974-11-14 | Verfahren zur herstellung von einkristallinem galliumarsenid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1495800A true GB1495800A (en) | 1977-12-21 |
Family
ID=5930859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB46886/75A Expired GB1495800A (en) | 1974-11-14 | 1975-11-13 | Manufacture of monocrystalline gallium arsenide |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5443996B2 (https=) |
| DE (1) | DE2454110A1 (https=) |
| FR (1) | FR2290947A1 (https=) |
| GB (1) | GB1495800A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483736A (en) * | 1981-03-24 | 1984-11-20 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for producing a single crystal of a IIIb -Vb compound |
| CN119710296A (zh) * | 2025-03-01 | 2025-03-28 | 中南大学 | 含砷危废料提取制备高纯砷的方法及装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4946543A (en) * | 1986-06-02 | 1990-08-07 | Kalisher Murray H | Method and apparatus for growing films on a substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5210116A (en) * | 1975-07-15 | 1977-01-26 | Hitachi Ltd | Magnetized memory reading device |
-
1974
- 1974-11-14 DE DE19742454110 patent/DE2454110A1/de active Pending
-
1975
- 1975-11-13 GB GB46886/75A patent/GB1495800A/en not_active Expired
- 1975-11-13 FR FR7534604A patent/FR2290947A1/fr active Granted
- 1975-11-14 JP JP13769675A patent/JPS5443996B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483736A (en) * | 1981-03-24 | 1984-11-20 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for producing a single crystal of a IIIb -Vb compound |
| CN119710296A (zh) * | 2025-03-01 | 2025-03-28 | 中南大学 | 含砷危废料提取制备高纯砷的方法及装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2454110A1 (de) | 1976-05-20 |
| JPS5172998A (https=) | 1976-06-24 |
| JPS5443996B2 (https=) | 1979-12-22 |
| FR2290947A1 (fr) | 1976-06-11 |
| FR2290947B1 (https=) | 1978-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |