FR2290947A1 - Procede de preparation de monocristaux d'arseniure de gallium - Google Patents

Procede de preparation de monocristaux d'arseniure de gallium

Info

Publication number
FR2290947A1
FR2290947A1 FR7534604A FR7534604A FR2290947A1 FR 2290947 A1 FR2290947 A1 FR 2290947A1 FR 7534604 A FR7534604 A FR 7534604A FR 7534604 A FR7534604 A FR 7534604A FR 2290947 A1 FR2290947 A1 FR 2290947A1
Authority
FR
France
Prior art keywords
preparation
gallium arsenide
single crystals
arsenide single
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7534604A
Other languages
English (en)
French (fr)
Other versions
FR2290947B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2290947A1 publication Critical patent/FR2290947A1/fr
Application granted granted Critical
Publication of FR2290947B1 publication Critical patent/FR2290947B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7534604A 1974-11-14 1975-11-13 Procede de preparation de monocristaux d'arseniure de gallium Granted FR2290947A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742454110 DE2454110A1 (de) 1974-11-14 1974-11-14 Verfahren zur herstellung von einkristallinem galliumarsenid

Publications (2)

Publication Number Publication Date
FR2290947A1 true FR2290947A1 (fr) 1976-06-11
FR2290947B1 FR2290947B1 (https=) 1978-05-12

Family

ID=5930859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7534604A Granted FR2290947A1 (fr) 1974-11-14 1975-11-13 Procede de preparation de monocristaux d'arseniure de gallium

Country Status (4)

Country Link
JP (1) JPS5443996B2 (https=)
DE (1) DE2454110A1 (https=)
FR (1) FR2290947A1 (https=)
GB (1) GB1495800A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
CN119710296B (zh) * 2025-03-01 2025-06-27 中南大学 含砷危废料提取制备高纯砷的方法及装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210116A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Magnetized memory reading device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1495800A (en) 1977-12-21
DE2454110A1 (de) 1976-05-20
JPS5172998A (https=) 1976-06-24
JPS5443996B2 (https=) 1979-12-22
FR2290947B1 (https=) 1978-05-12

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Legal Events

Date Code Title Description
ST Notification of lapse