JPS5443665A - Semiconductor direct oscillator - Google Patents

Semiconductor direct oscillator

Info

Publication number
JPS5443665A
JPS5443665A JP11028477A JP11028477A JPS5443665A JP S5443665 A JPS5443665 A JP S5443665A JP 11028477 A JP11028477 A JP 11028477A JP 11028477 A JP11028477 A JP 11028477A JP S5443665 A JPS5443665 A JP S5443665A
Authority
JP
Japan
Prior art keywords
cavity
semiconductor
oscillator
frequency
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11028477A
Other languages
Japanese (ja)
Inventor
Mikio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11028477A priority Critical patent/JPS5443665A/en
Publication of JPS5443665A publication Critical patent/JPS5443665A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor

Abstract

PURPOSE:To stabilize an oscillated frequency with compensating the frequency drift dependent upon environmental temperatures by loading a semiconductor variable capacity element in the cavity where a semiconductor direct oscillation element is stored and fitting a heat-sensitive element consisting of a positive-polarity thermistor on the outside wall of the cavity. CONSTITUTION:Semiconductor direct oscillation element 1 and semiconductor variable capacity element 7 are stored in cavity 3, and element 1 is connected to DC power supply unit 2 arranged outside cavity 3, and element 7 is connected to constant voltage DC power supply unit 8 through resistor 10. Further, heat-sensitive element 6 consisting of a positive-polarity thermistor is fitted to the outside wall of cavity 3 and is connected to element 7 through resistor 9, and mechanical tuning is performed by vise 5. In this constitution, the resistance value of element 7 and the applied voltage of element 7 are made higher in case of heating from the oscillator and rise of environmental temperatures. As a result, since the oscillated frequency becomes higher, the temperature-frequency characteristic of the oscillator is improved.
JP11028477A 1977-09-13 1977-09-13 Semiconductor direct oscillator Pending JPS5443665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11028477A JPS5443665A (en) 1977-09-13 1977-09-13 Semiconductor direct oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11028477A JPS5443665A (en) 1977-09-13 1977-09-13 Semiconductor direct oscillator

Publications (1)

Publication Number Publication Date
JPS5443665A true JPS5443665A (en) 1979-04-06

Family

ID=14531782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11028477A Pending JPS5443665A (en) 1977-09-13 1977-09-13 Semiconductor direct oscillator

Country Status (1)

Country Link
JP (1) JPS5443665A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224310A (en) * 1984-04-23 1985-11-08 Tokyo Keiki Co Ltd Microwave semiconductor oscillator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149757A (en) * 1975-06-17 1976-12-22 Mitsubishi Electric Corp Temperature compensator for solid-state oscillator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149757A (en) * 1975-06-17 1976-12-22 Mitsubishi Electric Corp Temperature compensator for solid-state oscillator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224310A (en) * 1984-04-23 1985-11-08 Tokyo Keiki Co Ltd Microwave semiconductor oscillator

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