JPS5441300A - Method of forming sic coat - Google Patents

Method of forming sic coat

Info

Publication number
JPS5441300A
JPS5441300A JP9267078A JP9267078A JPS5441300A JP S5441300 A JPS5441300 A JP S5441300A JP 9267078 A JP9267078 A JP 9267078A JP 9267078 A JP9267078 A JP 9267078A JP S5441300 A JPS5441300 A JP S5441300A
Authority
JP
Japan
Prior art keywords
forming sic
sic coat
coat
forming
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9267078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5626640B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Baagenburitsuto Merubin
Barotsugu Moshie
Chiyan Shiiaaku
Raizuman Aanorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5441300A publication Critical patent/JPS5441300A/ja
Publication of JPS5626640B2 publication Critical patent/JPS5626640B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057—Carbides
    • C04B41/5059—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP9267078A 1977-09-08 1978-07-31 Method of forming sic coat Granted JPS5441300A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/831,561 US4123571A (en) 1977-09-08 1977-09-08 Method for forming smooth self limiting and pin hole free SiC films on Si

Publications (2)

Publication Number Publication Date
JPS5441300A true JPS5441300A (en) 1979-04-02
JPS5626640B2 JPS5626640B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-19

Family

ID=25259336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9267078A Granted JPS5441300A (en) 1977-09-08 1978-07-31 Method of forming sic coat

Country Status (4)

Country Link
US (1) US4123571A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0001373B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5441300A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2862062D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159984A (en) * 1979-06-01 1980-12-12 Seiko Epson Corp Ink-jet recording head
JP2003045812A (ja) * 2001-07-31 2003-02-14 Tokai Carbon Co Ltd 炭化珪素質半導体製造装置用部材およびその製造方法
JP2008169111A (ja) * 2008-01-28 2008-07-24 Showa Denko Kk 炭化珪素単結晶の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451391A (en) * 1982-09-24 1984-05-29 International Business Machines Corporation Conductive silicon carbide
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
JPH0194253U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-12-11 1989-06-21
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
US5393647A (en) * 1993-07-16 1995-02-28 Armand P. Neukermans Method of making superhard tips for micro-probe microscopy and field emission
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
US5932940A (en) * 1996-07-16 1999-08-03 Massachusetts Institute Of Technology Microturbomachinery
US5901425A (en) * 1996-08-27 1999-05-11 Topaz Technologies Inc. Inkjet print head apparatus
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
US6784485B1 (en) * 2000-02-11 2004-08-31 International Business Machines Corporation Diffusion barrier layer and semiconductor device containing same
US20040110013A1 (en) * 2002-07-26 2004-06-10 Yoder Karl J. Method of increasing mechanical properties of semiconductor substrates
WO2006008941A1 (ja) * 2004-07-22 2006-01-26 Toyo Tanso Co., Ltd. サセプタ
WO2014008293A1 (en) 2012-07-02 2014-01-09 Zimmer, Inc. Thin film tantalum coating for medical implants
US20160230570A1 (en) 2015-02-11 2016-08-11 Rolls-Royce High Temperature Composites Inc. Modified atmosphere melt infiltration

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501786A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1964-02-26 1965-08-27
GB1115951A (en) * 1965-07-13 1968-06-06 Gen Electric Co Ltd Improvements in or relating to apparatus incorporating electrical heating elements and processes involving the use of such apparatus
GB1092582A (en) * 1966-02-02 1967-11-29 Ibm Method of manufacturing a monocrystalline silicon carbide layer
GB1158637A (en) * 1966-08-25 1969-07-16 Atomic Energy Authority Uk Improvements in or relating to Processes involving the Pyrolytic Deposition of Carbon or other Substances from a Gas or Vapour
US3794516A (en) * 1970-12-15 1974-02-26 W Engeler Method for making high temperature low ohmic contact to silicon
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159984A (en) * 1979-06-01 1980-12-12 Seiko Epson Corp Ink-jet recording head
JP2003045812A (ja) * 2001-07-31 2003-02-14 Tokai Carbon Co Ltd 炭化珪素質半導体製造装置用部材およびその製造方法
JP2008169111A (ja) * 2008-01-28 2008-07-24 Showa Denko Kk 炭化珪素単結晶の製造方法

Also Published As

Publication number Publication date
EP0001373A1 (fr) 1979-04-04
EP0001373B1 (fr) 1982-10-20
JPS5626640B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-19
DE2862062D1 (en) 1982-11-25
US4123571A (en) 1978-10-31

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