JPS5435471B2 - - Google Patents
Info
- Publication number
- JPS5435471B2 JPS5435471B2 JP1065373A JP1065373A JPS5435471B2 JP S5435471 B2 JPS5435471 B2 JP S5435471B2 JP 1065373 A JP1065373 A JP 1065373A JP 1065373 A JP1065373 A JP 1065373A JP S5435471 B2 JPS5435471 B2 JP S5435471B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH439872A CH543178A (de) | 1972-03-27 | 1972-03-27 | Kontinuierlich steuerbares Leistungshalbleiterbauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4915382A JPS4915382A (enExample) | 1974-02-09 |
| JPS5435471B2 true JPS5435471B2 (enExample) | 1979-11-02 |
Family
ID=4275388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1065373A Expired JPS5435471B2 (enExample) | 1972-03-27 | 1973-01-25 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3914780A (enExample) |
| JP (1) | JPS5435471B2 (enExample) |
| CH (1) | CH543178A (enExample) |
| DE (1) | DE2218030A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5418552B2 (enExample) * | 1972-07-26 | 1979-07-09 | ||
| US4066483A (en) * | 1976-07-07 | 1978-01-03 | Western Electric Company, Inc. | Gate-controlled bidirectional switching device |
| US4214255A (en) * | 1977-02-07 | 1980-07-22 | Rca Corporation | Gate turn-off triac with dual low conductivity regions contacting central gate region |
| DE2941021C2 (de) * | 1979-10-10 | 1985-07-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur |
| JPS5688339A (en) * | 1979-12-21 | 1981-07-17 | Hitachi Ltd | Dhd-sealed semiconductor device |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| DE68923056T2 (de) * | 1988-10-04 | 1995-11-30 | Toshiba Kawasaki Kk | Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung. |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE489418A (enExample) * | 1948-06-26 | |||
| US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
| US3300658A (en) * | 1958-11-12 | 1967-01-24 | Transitron Electronic Corp | Semi-conductor amplifying device |
| NL251532A (enExample) * | 1959-06-17 | |||
| US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
| US3264492A (en) * | 1963-08-06 | 1966-08-02 | Int Rectifier Corp | Adjustable semiconductor punchthrough device having three junctions |
| US3389024A (en) * | 1964-05-12 | 1968-06-18 | Licentia Gmbh | Method of forming a semiconductor by diffusion through the use of a cobalt salt |
| GB1039915A (en) * | 1964-05-25 | 1966-08-24 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3328652A (en) * | 1964-07-20 | 1967-06-27 | Gen Electric | Voltage comparator |
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
| SE318940B (enExample) * | 1966-09-05 | 1969-12-22 | Asea Ab | |
| NL6616834A (enExample) * | 1966-11-30 | 1968-05-31 | ||
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| US3617829A (en) * | 1969-12-01 | 1971-11-02 | Motorola Inc | Radiation-insensitive voltage standard means |
| US3739235A (en) * | 1972-01-31 | 1973-06-12 | Rca Corp | Transcalent semiconductor device |
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1972
- 1972-03-27 CH CH439872A patent/CH543178A/de not_active IP Right Cessation
- 1972-04-14 DE DE2218030A patent/DE2218030A1/de not_active Ceased
-
1973
- 1973-01-25 JP JP1065373A patent/JPS5435471B2/ja not_active Expired
- 1973-02-06 US US329983A patent/US3914780A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2218030A1 (de) | 1973-10-11 |
| JPS4915382A (enExample) | 1974-02-09 |
| US3914780A (en) | 1975-10-21 |
| CH543178A (de) | 1973-10-15 |