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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP10045577ApriorityCriticalpatent/JPS5434779A/en
Publication of JPS5434779ApublicationCriticalpatent/JPS5434779A/en
Testing Or Measuring Of Semiconductors Or The Like
(AREA)
Abstract
PURPOSE: To know easily junction depth and an impurity-density gradient without bevel grinding by irradiating the circumference of a PN junction with an electromagnetic wave slantingly, by detecting the reflected electromagnetic wave, and by measuring the reflection amount of this wave and its reflection angle.
COPYRIGHT: (C)1979,JPO&Japio
JP10045577A1977-08-241977-08-24Method and device for measuring pn junction state
PendingJPS5434779A
(en)