JPS5429945A - Comparator - Google Patents
ComparatorInfo
- Publication number
- JPS5429945A JPS5429945A JP9515877A JP9515877A JPS5429945A JP S5429945 A JPS5429945 A JP S5429945A JP 9515877 A JP9515877 A JP 9515877A JP 9515877 A JP9515877 A JP 9515877A JP S5429945 A JPS5429945 A JP S5429945A
- Authority
- JP
- Japan
- Prior art keywords
- edge
- mosfet
- comparator
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
- H03F3/387—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only
- H03F3/393—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Measurement Of Current Or Voltage (AREA)
- Manipulation Of Pulses (AREA)
Abstract
PURPOSE:To improve frequency characteristic and amplification degree by providing a dummy MOSFET through the source edge or the drain edge at the drain edge or the source edge of a bias voltage setting MOSFET.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9515877A JPS5915207B2 (en) | 1977-08-10 | 1977-08-10 | comparator |
DE19782834920 DE2834920C3 (en) | 1977-08-10 | 1978-08-09 | Comparator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9515877A JPS5915207B2 (en) | 1977-08-10 | 1977-08-10 | comparator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5429945A true JPS5429945A (en) | 1979-03-06 |
JPS5915207B2 JPS5915207B2 (en) | 1984-04-07 |
Family
ID=14129969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9515877A Expired JPS5915207B2 (en) | 1977-08-10 | 1977-08-10 | comparator |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5915207B2 (en) |
DE (1) | DE2834920C3 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262221A (en) * | 1979-03-09 | 1981-04-14 | Rca Corporation | Voltage comparator |
US4404525A (en) * | 1981-03-03 | 1983-09-13 | American Microsystems, Inc. | Switched capacitor gain stage with offset and switch feedthrough cancellation scheme |
-
1977
- 1977-08-10 JP JP9515877A patent/JPS5915207B2/en not_active Expired
-
1978
- 1978-08-09 DE DE19782834920 patent/DE2834920C3/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2834920C3 (en) | 1981-06-11 |
DE2834920A1 (en) | 1979-02-22 |
DE2834920B2 (en) | 1980-09-25 |
JPS5915207B2 (en) | 1984-04-07 |
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