JPS5426668A - Field effect transistor of junction gate type - Google Patents
Field effect transistor of junction gate typeInfo
- Publication number
- JPS5426668A JPS5426668A JP9173877A JP9173877A JPS5426668A JP S5426668 A JPS5426668 A JP S5426668A JP 9173877 A JP9173877 A JP 9173877A JP 9173877 A JP9173877 A JP 9173877A JP S5426668 A JPS5426668 A JP S5426668A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate type
- junction gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9173877A JPS5426668A (en) | 1977-07-29 | 1977-07-29 | Field effect transistor of junction gate type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9173877A JPS5426668A (en) | 1977-07-29 | 1977-07-29 | Field effect transistor of junction gate type |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5426668A true JPS5426668A (en) | 1979-02-28 |
Family
ID=14034853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9173877A Pending JPS5426668A (en) | 1977-07-29 | 1977-07-29 | Field effect transistor of junction gate type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5426668A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843576A (ja) * | 1981-09-10 | 1983-03-14 | Oki Electric Ind Co Ltd | 化合物半導体電界効果トランジスタ及びその製造方法 |
-
1977
- 1977-07-29 JP JP9173877A patent/JPS5426668A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843576A (ja) * | 1981-09-10 | 1983-03-14 | Oki Electric Ind Co Ltd | 化合物半導体電界効果トランジスタ及びその製造方法 |
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