JPS5422278B2 - - Google Patents
Info
- Publication number
- JPS5422278B2 JPS5422278B2 JP10653973A JP10653973A JPS5422278B2 JP S5422278 B2 JPS5422278 B2 JP S5422278B2 JP 10653973 A JP10653973 A JP 10653973A JP 10653973 A JP10653973 A JP 10653973A JP S5422278 B2 JPS5422278 B2 JP S5422278B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B1/00—Methods of steam generation characterised by form of heating method
- F22B1/02—Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers
- F22B1/06—Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers the heat carrier being molten; Use of molten metal, e.g. zinc, as heat transfer medium
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B1/00—Methods of steam generation characterised by form of heating method
- F22B1/02—Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers
- F22B1/06—Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers the heat carrier being molten; Use of molten metal, e.g. zinc, as heat transfer medium
- F22B1/063—Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers the heat carrier being molten; Use of molten metal, e.g. zinc, as heat transfer medium for metal cooled nuclear reactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Light Receiving Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7212912A NL7212912A (enrdf_load_stackoverflow) | 1972-09-23 | 1972-09-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4971875A JPS4971875A (enrdf_load_stackoverflow) | 1974-07-11 |
| JPS5422278B2 true JPS5422278B2 (enrdf_load_stackoverflow) | 1979-08-06 |
Family
ID=19816996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10653973A Expired JPS5422278B2 (enrdf_load_stackoverflow) | 1972-09-23 | 1973-09-22 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3896483A (enrdf_load_stackoverflow) |
| JP (1) | JPS5422278B2 (enrdf_load_stackoverflow) |
| CA (1) | CA987791A (enrdf_load_stackoverflow) |
| DE (1) | DE2347595A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2200694B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1451492A (enrdf_load_stackoverflow) |
| IT (1) | IT1004578B (enrdf_load_stackoverflow) |
| NL (1) | NL7212912A (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3988619A (en) * | 1974-12-27 | 1976-10-26 | International Business Machines Corporation | Random access solid-state image sensor with non-destructive read-out |
| JPS52146186A (en) * | 1976-05-28 | 1977-12-05 | Fujitsu Ltd | Semiconductor device |
| US4166223A (en) * | 1978-02-06 | 1979-08-28 | Westinghouse Electric Corp. | Dual field effect transistor structure for compensating effects of threshold voltage |
| US4249190A (en) * | 1979-07-05 | 1981-02-03 | Bell Telephone Laboratories, Incorporated | Floating gate vertical FET |
| US4680605A (en) * | 1984-03-12 | 1987-07-14 | Xerox Corporation | High voltage depletion mode transistor with serpentine current path |
| US7589007B2 (en) * | 1999-06-02 | 2009-09-15 | Arizona Board Of Regents For And On Behalf Of Arizona State University | MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
| US6864131B2 (en) * | 1999-06-02 | 2005-03-08 | Arizona State University | Complementary Schottky junction transistors and methods of forming the same |
| US7714352B2 (en) * | 2006-02-09 | 2010-05-11 | Nissan Motor Co., Ltd. | Hetero junction semiconductor device |
| US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
| JP5764742B2 (ja) * | 2010-05-17 | 2015-08-19 | パナソニックＩｐマネジメント株式会社 | 接合型電界効果トランジスタ、その製造方法及びアナログ回路 |
| KR101196316B1 (ko) * | 2011-01-14 | 2012-11-01 | 주식회사 동부하이텍 | 접합형 전계 효과 트랜지스터 및 제조방법 |
| US10529740B2 (en) | 2013-07-25 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor layer and conductive layer |
| US10515969B2 (en) | 2016-11-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2778956A (en) * | 1952-10-31 | 1957-01-22 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US3171042A (en) * | 1961-09-08 | 1965-02-23 | Bendix Corp | Device with combination of unipolar means and tunnel diode means |
| US3366802A (en) * | 1965-04-06 | 1968-01-30 | Fairchild Camera Instr Co | Field effect transistor photosensitive modulator |
| JPS4915668B1 (enrdf_load_stackoverflow) * | 1969-04-15 | 1974-04-16 | ||
| US3721839A (en) * | 1971-03-24 | 1973-03-20 | Philips Corp | Solid state imaging device with fet sensor |
| US3786441A (en) * | 1971-11-24 | 1974-01-15 | Gen Electric | Method and device for storing information and providing an electric readout |
-
1972
- 1972-09-23 NL NL7212912A patent/NL7212912A/xx not_active Application Discontinuation
-
1973
- 1973-09-19 US US398585A patent/US3896483A/en not_active Expired - Lifetime
- 1973-09-20 CA CA181,545A patent/CA987791A/en not_active Expired
- 1973-09-20 IT IT69777/73A patent/IT1004578B/it active
- 1973-09-21 DE DE19732347595 patent/DE2347595A1/de not_active Withdrawn
- 1973-09-22 JP JP10653973A patent/JPS5422278B2/ja not_active Expired
- 1973-09-23 GB GB4412973A patent/GB1451492A/en not_active Expired
- 1973-09-24 FR FR7334079A patent/FR2200694B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA987791A (en) | 1976-04-20 |
| GB1451492A (en) | 1976-10-06 |
| JPS4971875A (enrdf_load_stackoverflow) | 1974-07-11 |
| FR2200694B1 (enrdf_load_stackoverflow) | 1978-01-13 |
| US3896483A (en) | 1975-07-22 |
| FR2200694A1 (enrdf_load_stackoverflow) | 1974-04-19 |
| DE2347595A1 (de) | 1974-04-04 |
| IT1004578B (it) | 1976-07-20 |
| NL7212912A (enrdf_load_stackoverflow) | 1974-03-26 |