JPS5416717B1 - - Google Patents
Info
- Publication number
- JPS5416717B1 JPS5416717B1 JP6728069A JP6728069A JPS5416717B1 JP S5416717 B1 JPS5416717 B1 JP S5416717B1 JP 6728069 A JP6728069 A JP 6728069A JP 6728069 A JP6728069 A JP 6728069A JP S5416717 B1 JPS5416717 B1 JP S5416717B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75561068A | 1968-08-27 | 1968-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5416717B1 true JPS5416717B1 (ja) | 1979-06-25 |
Family
ID=25039854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6728069A Pending JPS5416717B1 (ja) | 1968-08-27 | 1969-08-27 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3585412A (ja) |
JP (1) | JPS5416717B1 (ja) |
BE (1) | BE737934A (ja) |
DE (1) | DE1942558C3 (ja) |
FR (1) | FR2016097B1 (ja) |
GB (1) | GB1286307A (ja) |
NL (1) | NL151564B (ja) |
SE (1) | SE374841B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3780320A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Schottky barrier diode read-only memory |
DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
GB1434961A (en) * | 1973-11-08 | 1976-05-12 | Plessey Co Ltd | Integrated circuit arrangements |
DE2739283A1 (de) * | 1977-08-31 | 1979-03-15 | Siemens Ag | Integrierbare halbleiterspeicherzelle |
JPS5499580A (en) * | 1977-12-27 | 1979-08-06 | Nec Corp | Semiconductor integrated circuit device |
NL188721C (nl) * | 1978-12-22 | 1992-09-01 | Philips Nv | Halfgeleidergeheugenschakeling voor een statisch geheugen. |
US4338532A (en) * | 1979-11-30 | 1982-07-06 | International Business Machines Corp. | Integrated delay circuits |
US4675715A (en) * | 1982-12-09 | 1987-06-23 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor integrated circuit vertical geometry impedance element |
US4922455A (en) * | 1987-09-08 | 1990-05-01 | International Business Machines Corporation | Memory cell with active device for saturation capacitance discharge prior to writing |
DE69324864T2 (de) * | 1992-08-21 | 1999-10-07 | Stmicroelectronics, Inc. | Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3102208A (en) * | 1960-02-17 | 1963-08-27 | Honeywell Regulator Co | Race-preventing flip-flop switches by trailing edge of clock pulse applied through charged series capacitor |
US3463975A (en) * | 1964-12-31 | 1969-08-26 | Texas Instruments Inc | Unitary semiconductor high speed switching device utilizing a barrier diode |
-
1968
- 1968-08-27 US US755610A patent/US3585412A/en not_active Expired - Lifetime
-
1969
- 1969-08-20 SE SE6911560A patent/SE374841B/xx unknown
- 1969-08-21 DE DE19691942558 patent/DE1942558C3/de not_active Expired
- 1969-08-25 BE BE737934D patent/BE737934A/xx not_active IP Right Cessation
- 1969-08-26 FR FR6929171A patent/FR2016097B1/fr not_active Expired
- 1969-08-26 NL NL696913016A patent/NL151564B/xx not_active IP Right Cessation
- 1969-08-27 JP JP6728069A patent/JPS5416717B1/ja active Pending
- 1969-08-27 GB GB42606/69A patent/GB1286307A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1286307A (en) | 1972-08-23 |
NL6913016A (ja) | 1970-03-03 |
DE1942558A1 (de) | 1970-03-12 |
DE1942558C3 (de) | 1973-06-28 |
BE737934A (ja) | 1970-02-02 |
FR2016097B1 (ja) | 1979-04-13 |
DE1942558B2 (de) | 1972-12-07 |
SE374841B (ja) | 1975-03-17 |
US3585412A (en) | 1971-06-15 |
FR2016097A1 (ja) | 1970-04-30 |
NL151564B (nl) | 1976-11-15 |