JPS54145384A - Multisystem gas phase growing device - Google Patents

Multisystem gas phase growing device

Info

Publication number
JPS54145384A
JPS54145384A JP5337378A JP5337378A JPS54145384A JP S54145384 A JPS54145384 A JP S54145384A JP 5337378 A JP5337378 A JP 5337378A JP 5337378 A JP5337378 A JP 5337378A JP S54145384 A JPS54145384 A JP S54145384A
Authority
JP
Japan
Prior art keywords
chamber
zone
gas
sent
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5337378A
Other languages
Japanese (ja)
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5337378A priority Critical patent/JPS54145384A/en
Publication of JPS54145384A publication Critical patent/JPS54145384A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: Original gas from each system is mixed in the chamber in high temperature source zone, then admitted in the growing zone to obtain growing layer, thereby providing uniform composition growing layer and effecting reproducible controlling.
CONSTITUTION: Raw meterial such as Ga or In is placed in sectioned chambers 111 to 114 of a source chamber 12 located in high temperature zone of reaction tuge 101. Gas such as AsCl3 or PCl3 is introduced through channels 121 to 124 and reacted with Ga or In in the chamber 111 to 114. The formed chloride of Ga or In, single element of As or P are sent by carrier gas to mixing chamber 103. The chamber 103 is located in the reaction tube 101 at the position equivalent to the chamber 111 to 114, which is at highest temperature zone in the reaction tube, so that mutual gas diffusion are actively occurred and gases are sent to the seed zone without forming undesirable precipitation. As a result, epitaxial crystal is uniformly grown on the substrate crystal 107.
COPYRIGHT: (C)1979,JPO&Japio
JP5337378A 1978-05-04 1978-05-04 Multisystem gas phase growing device Pending JPS54145384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5337378A JPS54145384A (en) 1978-05-04 1978-05-04 Multisystem gas phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5337378A JPS54145384A (en) 1978-05-04 1978-05-04 Multisystem gas phase growing device

Publications (1)

Publication Number Publication Date
JPS54145384A true JPS54145384A (en) 1979-11-13

Family

ID=12941004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5337378A Pending JPS54145384A (en) 1978-05-04 1978-05-04 Multisystem gas phase growing device

Country Status (1)

Country Link
JP (1) JPS54145384A (en)

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