JPS54145384A - Multisystem gas phase growing device - Google Patents
Multisystem gas phase growing deviceInfo
- Publication number
- JPS54145384A JPS54145384A JP5337378A JP5337378A JPS54145384A JP S54145384 A JPS54145384 A JP S54145384A JP 5337378 A JP5337378 A JP 5337378A JP 5337378 A JP5337378 A JP 5337378A JP S54145384 A JPS54145384 A JP S54145384A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- zone
- gas
- sent
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: Original gas from each system is mixed in the chamber in high temperature source zone, then admitted in the growing zone to obtain growing layer, thereby providing uniform composition growing layer and effecting reproducible controlling.
CONSTITUTION: Raw meterial such as Ga or In is placed in sectioned chambers 111 to 114 of a source chamber 12 located in high temperature zone of reaction tuge 101. Gas such as AsCl3 or PCl3 is introduced through channels 121 to 124 and reacted with Ga or In in the chamber 111 to 114. The formed chloride of Ga or In, single element of As or P are sent by carrier gas to mixing chamber 103. The chamber 103 is located in the reaction tube 101 at the position equivalent to the chamber 111 to 114, which is at highest temperature zone in the reaction tube, so that mutual gas diffusion are actively occurred and gases are sent to the seed zone without forming undesirable precipitation. As a result, epitaxial crystal is uniformly grown on the substrate crystal 107.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5337378A JPS54145384A (en) | 1978-05-04 | 1978-05-04 | Multisystem gas phase growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5337378A JPS54145384A (en) | 1978-05-04 | 1978-05-04 | Multisystem gas phase growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54145384A true JPS54145384A (en) | 1979-11-13 |
Family
ID=12941004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5337378A Pending JPS54145384A (en) | 1978-05-04 | 1978-05-04 | Multisystem gas phase growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54145384A (en) |
-
1978
- 1978-05-04 JP JP5337378A patent/JPS54145384A/en active Pending
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