JPS54144879A - Threshold voltage measuring circuit for mos type transistor - Google Patents

Threshold voltage measuring circuit for mos type transistor

Info

Publication number
JPS54144879A
JPS54144879A JP5355078A JP5355078A JPS54144879A JP S54144879 A JPS54144879 A JP S54144879A JP 5355078 A JP5355078 A JP 5355078A JP 5355078 A JP5355078 A JP 5355078A JP S54144879 A JPS54144879 A JP S54144879A
Authority
JP
Japan
Prior art keywords
voltage
comparator
amplifier
constitution
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5355078A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Kyohiko Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5355078A priority Critical patent/JPS54144879A/en
Publication of JPS54144879A publication Critical patent/JPS54144879A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To obtain the threshold value voltage, by measuring the voltage when the voltage drop of gate is stopped, through the constitution of the circuit with the amplifier amplifying the drain to source current, power supply outputting the same voltage as the output voltage and the comparator comparing those.
CONSTITUTION: The circuit measurng the threshold voltage of the MOS type transistor 4 is constituted with the amplifier A1, comparator A2, resistors R1 to R4 and power supplies E1 to E4. With this constitution, the output voltage of the power supply E2 is the same as the output voltage of the amplifier A1 to the specified current between the drain and the source of the element 4, and the electrodes of the element 4 are connected to the drain, gate and source terminals 1 to 3. Further, to the inversion input of the amplifier A1 in which the output voltage is zero, V2 is fed from the power supply E2 to produce the difference voltage between the non-inverting input and the inverting input, producing the difference voltage amplified between the comparator A2 and the terminal 2. After that, the output of the comparator A2 is fed to the terminal 2, and when this voltage falls down and stops, the voltage value is regarded as the threshold voltage.
COPYRIGHT: (C)1979,JPO&Japio
JP5355078A 1978-05-04 1978-05-04 Threshold voltage measuring circuit for mos type transistor Pending JPS54144879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5355078A JPS54144879A (en) 1978-05-04 1978-05-04 Threshold voltage measuring circuit for mos type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5355078A JPS54144879A (en) 1978-05-04 1978-05-04 Threshold voltage measuring circuit for mos type transistor

Publications (1)

Publication Number Publication Date
JPS54144879A true JPS54144879A (en) 1979-11-12

Family

ID=12945894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5355078A Pending JPS54144879A (en) 1978-05-04 1978-05-04 Threshold voltage measuring circuit for mos type transistor

Country Status (1)

Country Link
JP (1) JPS54144879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029678A (en) * 1983-07-28 1985-02-15 Fujitsu Ltd Gate injecting current measuring device of mosfet
CN105988072A (en) * 2015-02-15 2016-10-05 中芯国际集成电路制造(上海)有限公司 Starting voltage testing system and testing method for MOS transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029678A (en) * 1983-07-28 1985-02-15 Fujitsu Ltd Gate injecting current measuring device of mosfet
CN105988072A (en) * 2015-02-15 2016-10-05 中芯国际集成电路制造(上海)有限公司 Starting voltage testing system and testing method for MOS transistor
CN105988072B (en) * 2015-02-15 2019-04-19 中芯国际集成电路制造(上海)有限公司 The cut-in voltage test macro and test method of MOS transistor

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