JPS54144879A - Threshold voltage measuring circuit for mos type transistor - Google Patents
Threshold voltage measuring circuit for mos type transistorInfo
- Publication number
- JPS54144879A JPS54144879A JP5355078A JP5355078A JPS54144879A JP S54144879 A JPS54144879 A JP S54144879A JP 5355078 A JP5355078 A JP 5355078A JP 5355078 A JP5355078 A JP 5355078A JP S54144879 A JPS54144879 A JP S54144879A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- comparator
- amplifier
- constitution
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
PURPOSE: To obtain the threshold value voltage, by measuring the voltage when the voltage drop of gate is stopped, through the constitution of the circuit with the amplifier amplifying the drain to source current, power supply outputting the same voltage as the output voltage and the comparator comparing those.
CONSTITUTION: The circuit measurng the threshold voltage of the MOS type transistor 4 is constituted with the amplifier A1, comparator A2, resistors R1 to R4 and power supplies E1 to E4. With this constitution, the output voltage of the power supply E2 is the same as the output voltage of the amplifier A1 to the specified current between the drain and the source of the element 4, and the electrodes of the element 4 are connected to the drain, gate and source terminals 1 to 3. Further, to the inversion input of the amplifier A1 in which the output voltage is zero, V2 is fed from the power supply E2 to produce the difference voltage between the non-inverting input and the inverting input, producing the difference voltage amplified between the comparator A2 and the terminal 2. After that, the output of the comparator A2 is fed to the terminal 2, and when this voltage falls down and stops, the voltage value is regarded as the threshold voltage.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5355078A JPS54144879A (en) | 1978-05-04 | 1978-05-04 | Threshold voltage measuring circuit for mos type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5355078A JPS54144879A (en) | 1978-05-04 | 1978-05-04 | Threshold voltage measuring circuit for mos type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54144879A true JPS54144879A (en) | 1979-11-12 |
Family
ID=12945894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5355078A Pending JPS54144879A (en) | 1978-05-04 | 1978-05-04 | Threshold voltage measuring circuit for mos type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54144879A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6029678A (en) * | 1983-07-28 | 1985-02-15 | Fujitsu Ltd | Gate injecting current measuring device of mosfet |
CN105988072A (en) * | 2015-02-15 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Starting voltage testing system and testing method for MOS transistor |
-
1978
- 1978-05-04 JP JP5355078A patent/JPS54144879A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6029678A (en) * | 1983-07-28 | 1985-02-15 | Fujitsu Ltd | Gate injecting current measuring device of mosfet |
CN105988072A (en) * | 2015-02-15 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Starting voltage testing system and testing method for MOS transistor |
CN105988072B (en) * | 2015-02-15 | 2019-04-19 | 中芯国际集成电路制造(上海)有限公司 | The cut-in voltage test macro and test method of MOS transistor |
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