JPS54137977A - Electron-beam exposure unit - Google Patents

Electron-beam exposure unit

Info

Publication number
JPS54137977A
JPS54137977A JP4538178A JP4538178A JPS54137977A JP S54137977 A JPS54137977 A JP S54137977A JP 4538178 A JP4538178 A JP 4538178A JP 4538178 A JP4538178 A JP 4538178A JP S54137977 A JPS54137977 A JP S54137977A
Authority
JP
Japan
Prior art keywords
distance
poles
coil
deflector
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4538178A
Other languages
Japanese (ja)
Inventor
Teiji Katsuta
Shinjiro Katagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4538178A priority Critical patent/JPS54137977A/en
Publication of JPS54137977A publication Critical patent/JPS54137977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To elongate deffusion distance with operation distance shortened by settling an overcurrent and hysteresis by arranging a deflecting coil in a lens field and by making both upper and lower poles into ferromagnetic substances which respond quickly to a high frequency. CONSTITUTION:Object lens 4 is composed of upper and lower ferrite poles 7 and 8, magnetic path 10, and exciting coil 11, and deflector 6 is arranged in the lens field formed between poles 7 and 8. Deflector 6 has ferrite deflecting yoke (screening magnetic pole) 14 and deflecting coil 13 and is arranged at the outer circumference of the coil. Since the upper and lower poles and deflecting yoke are ferrite, an eddy current and magnetization hysteresis due to a high frequency are reduced to a degree that they can be ignored substantially, and the pattern is formed accurately. Further, the operating distance of object lens 4 to sampling surface 5a becomes equal substantially to the deflection distance of deflector 6 opposite to surface 5a, and the operating distance of lens 4 can be shortened with the same deflection distance, so that the electron-beam brightness on surface 5a will increase.
JP4538178A 1978-04-19 1978-04-19 Electron-beam exposure unit Pending JPS54137977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4538178A JPS54137977A (en) 1978-04-19 1978-04-19 Electron-beam exposure unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4538178A JPS54137977A (en) 1978-04-19 1978-04-19 Electron-beam exposure unit

Publications (1)

Publication Number Publication Date
JPS54137977A true JPS54137977A (en) 1979-10-26

Family

ID=12717683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4538178A Pending JPS54137977A (en) 1978-04-19 1978-04-19 Electron-beam exposure unit

Country Status (1)

Country Link
JP (1) JPS54137977A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120809A1 (en) * 2000-01-27 2001-08-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Objective lens for a charged particle beam device
WO2008058491A3 (en) * 2006-11-16 2008-07-10 Tescan S R O Scanning electron microscope
WO2013161684A1 (en) * 2012-04-24 2013-10-31 株式会社日立ハイテクノロジーズ Charged particle beam device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108398A (en) * 1975-03-17 1976-09-25 Ibm
JPS52109373A (en) * 1976-03-10 1977-09-13 Rikagaku Kenkyusho Method of deflecting and scanning electron beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108398A (en) * 1975-03-17 1976-09-25 Ibm
JPS52109373A (en) * 1976-03-10 1977-09-13 Rikagaku Kenkyusho Method of deflecting and scanning electron beam

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120809A1 (en) * 2000-01-27 2001-08-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Objective lens for a charged particle beam device
WO2001056056A3 (en) * 2000-01-27 2002-01-31 Integrated Circuit Testing Objective lens for a charged particle beam device
JP2003521096A (en) * 2000-01-27 2003-07-08 アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー Objective lens for charged particle beam devices
WO2008058491A3 (en) * 2006-11-16 2008-07-10 Tescan S R O Scanning electron microscope
WO2013161684A1 (en) * 2012-04-24 2013-10-31 株式会社日立ハイテクノロジーズ Charged particle beam device
JP2013229104A (en) * 2012-04-24 2013-11-07 Hitachi High-Technologies Corp Charged particle beam apparatus
US9312091B2 (en) 2012-04-24 2016-04-12 Hitachi High-Technologies Corporation Charged particle beam apparatus

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