JPS54137916A - Pickup-tube target - Google Patents

Pickup-tube target

Info

Publication number
JPS54137916A
JPS54137916A JP4529578A JP4529578A JPS54137916A JP S54137916 A JPS54137916 A JP S54137916A JP 4529578 A JP4529578 A JP 4529578A JP 4529578 A JP4529578 A JP 4529578A JP S54137916 A JPS54137916 A JP S54137916A
Authority
JP
Japan
Prior art keywords
vapor
film layer
deposited film
target
pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4529578A
Other languages
Japanese (ja)
Inventor
Susumu Nagira
Yukinori Katsuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Denshi KK
Original Assignee
Hitachi Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Denshi KK filed Critical Hitachi Denshi KK
Priority to JP4529578A priority Critical patent/JPS54137916A/en
Publication of JPS54137916A publication Critical patent/JPS54137916A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce residual images of a target using Sb2S3, by using Sb2S3 mixed with excessive Sb as a photoconductive material constituting the pickup-tube target.
CONSTITUTION: On transparent electrode 2 adhering to face plate 1 constituting the target of a photoconductive type pickup tube, vacuous vapor-deposited layer 3 of Sb2S3 is formed, on which porous Sb2S3 film layer 4 vapor-depositd in inert gas is formed. Instead of Sb2S3 used for those vapor-deposited film layers 3 and 4, a substance may be used which contains a little quantity of excessive Sb. In addition, vacuous vapor-deposited film layer 5 is formed after porous vapor-deposited film layer 4 and a mixture of Sb2S3, Sb2S3 and Sb with a ratio of 1:0.1 to 0.3:0.05 to 0.15 is used as the material of this vapor-deposited film layer 5.
COPYRIGHT: (C)1979,JPO&Japio
JP4529578A 1978-04-19 1978-04-19 Pickup-tube target Pending JPS54137916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4529578A JPS54137916A (en) 1978-04-19 1978-04-19 Pickup-tube target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4529578A JPS54137916A (en) 1978-04-19 1978-04-19 Pickup-tube target

Publications (1)

Publication Number Publication Date
JPS54137916A true JPS54137916A (en) 1979-10-26

Family

ID=12715313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4529578A Pending JPS54137916A (en) 1978-04-19 1978-04-19 Pickup-tube target

Country Status (1)

Country Link
JP (1) JPS54137916A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110444619A (en) * 2019-07-19 2019-11-12 河北大学 A kind of device and method thereof and application preparing large area selenizing Sb film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110444619A (en) * 2019-07-19 2019-11-12 河北大学 A kind of device and method thereof and application preparing large area selenizing Sb film
CN110444619B (en) * 2019-07-19 2021-04-20 河北大学 Equipment for preparing large-area antimony selenide film, method and application thereof

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