JPS5413348B2 - - Google Patents
Info
- Publication number
- JPS5413348B2 JPS5413348B2 JP14961475A JP14961475A JPS5413348B2 JP S5413348 B2 JPS5413348 B2 JP S5413348B2 JP 14961475 A JP14961475 A JP 14961475A JP 14961475 A JP14961475 A JP 14961475A JP S5413348 B2 JPS5413348 B2 JP S5413348B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961475A JPS5274280A (en) | 1975-12-17 | 1975-12-17 | Semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14961475A JPS5274280A (en) | 1975-12-17 | 1975-12-17 | Semiconductor device and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5274280A JPS5274280A (en) | 1977-06-22 |
JPS5413348B2 true JPS5413348B2 (fr) | 1979-05-30 |
Family
ID=15479047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14961475A Granted JPS5274280A (en) | 1975-12-17 | 1975-12-17 | Semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5274280A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794664A (zh) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | 一种新品n型半绝缘GaAs欧姆接触电极材料及其制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4301188A (en) * | 1979-10-01 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Process for producing contact to GaAs active region |
US5036023A (en) * | 1989-08-16 | 1991-07-30 | At&T Bell Laboratories | Rapid thermal processing method of making a semiconductor device |
US5924002A (en) * | 1994-12-22 | 1999-07-13 | Sony Corporation | Method of manufacturing a semiconductor device having ohmic electrode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5145987A (en) * | 1974-10-17 | 1976-04-19 | Oki Electric Ind Co Ltd | pn setsugohatsukodaioodo |
-
1975
- 1975-12-17 JP JP14961475A patent/JPS5274280A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5145987A (en) * | 1974-10-17 | 1976-04-19 | Oki Electric Ind Co Ltd | pn setsugohatsukodaioodo |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794664A (zh) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | 一种新品n型半绝缘GaAs欧姆接触电极材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5274280A (en) | 1977-06-22 |