JPS54127877A - Preparation of thin film - Google Patents
Preparation of thin filmInfo
- Publication number
- JPS54127877A JPS54127877A JP3490378A JP3490378A JPS54127877A JP S54127877 A JPS54127877 A JP S54127877A JP 3490378 A JP3490378 A JP 3490378A JP 3490378 A JP3490378 A JP 3490378A JP S54127877 A JPS54127877 A JP S54127877A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vacuum container
- deposition source
- resistor
- movement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3490378A JPS54127877A (en) | 1978-03-28 | 1978-03-28 | Preparation of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3490378A JPS54127877A (en) | 1978-03-28 | 1978-03-28 | Preparation of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54127877A true JPS54127877A (en) | 1979-10-04 |
Family
ID=12427136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3490378A Pending JPS54127877A (en) | 1978-03-28 | 1978-03-28 | Preparation of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54127877A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62250169A (ja) * | 1986-04-24 | 1987-10-31 | Nachi Fujikoshi Corp | イオンプレ−テイング装置 |
EP1113087A2 (en) | 1999-12-27 | 2001-07-04 | Sel Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and method for forming a film |
KR100471358B1 (ko) * | 2002-07-19 | 2005-03-15 | 엘지전자 주식회사 | 유기 전자 발광층의 증착 장치 |
US7211461B2 (en) | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
US8110509B2 (en) | 2002-05-17 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light emitting devices |
US8206507B2 (en) | 2002-05-17 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation method, evaporation device and method of fabricating light emitting device |
-
1978
- 1978-03-28 JP JP3490378A patent/JPS54127877A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62250169A (ja) * | 1986-04-24 | 1987-10-31 | Nachi Fujikoshi Corp | イオンプレ−テイング装置 |
EP1113087A2 (en) | 1999-12-27 | 2001-07-04 | Sel Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and method for forming a film |
EP1113087A3 (en) * | 1999-12-27 | 2003-11-19 | Sel Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and method for forming a film |
US8119189B2 (en) | 1999-12-27 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
US9559302B2 (en) | 1999-12-27 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
JP2018066066A (ja) * | 1999-12-27 | 2018-04-26 | 株式会社半導体エネルギー研究所 | 成膜方法 |
US8110509B2 (en) | 2002-05-17 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light emitting devices |
US8206507B2 (en) | 2002-05-17 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation method, evaporation device and method of fabricating light emitting device |
KR100471358B1 (ko) * | 2002-07-19 | 2005-03-15 | 엘지전자 주식회사 | 유기 전자 발광층의 증착 장치 |
US7211461B2 (en) | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
US8747558B2 (en) | 2003-02-14 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
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