JPS54115626A - Electrode - Google Patents

Electrode

Info

Publication number
JPS54115626A
JPS54115626A JP2165478A JP2165478A JPS54115626A JP S54115626 A JPS54115626 A JP S54115626A JP 2165478 A JP2165478 A JP 2165478A JP 2165478 A JP2165478 A JP 2165478A JP S54115626 A JPS54115626 A JP S54115626A
Authority
JP
Japan
Prior art keywords
alloy
cathode
group metals
soln
electrolysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2165478A
Other languages
Japanese (ja)
Other versions
JPS5857515B2 (en
Inventor
Yoshio Oda
Takashi Otoma
Eiji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP53021654A priority Critical patent/JPS5857515B2/en
Publication of JPS54115626A publication Critical patent/JPS54115626A/en
Publication of JPS5857515B2 publication Critical patent/JPS5857515B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To develop a cathode with superior alkali resistance and low hydrogen overvoltage for electrolysis of an aq. soln. of an alkali chloride by removing part of the components of an alloy of a specific compsn. from the alloy surface by etching to render the alloy porous.
CONSTITUTION: A cathode for electrolysis of aq. soln. of an alkali chloride is made of alloy of one or more kinds of first group metals consisting of Cr, Mn, Fe, Ti, Ta, Nb, V, Si, Zr, GE, Cu, Y and la, and one or more kinds of second group metals consisting of Ni, W, Ag, Co and Mo. The electrode surface is etched to 0.01W50 μ depth to reduce the first group metals to Fe; 15W90% and Cr; 0W20%, and a Fe- Cr-Ni alloy contg. Ni; 10W75% is used. By the etching a cathode is obtd. having 105W108/cm2 of fine pores on the surface, an electric double layer capacity of 5000 μF/cm2 and low hydrogen overvoltage.
COPYRIGHT: (C)1979,JPO&Japio
JP53021654A 1978-02-28 1978-02-28 electrode Expired JPS5857515B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53021654A JPS5857515B2 (en) 1978-02-28 1978-02-28 electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53021654A JPS5857515B2 (en) 1978-02-28 1978-02-28 electrode

Publications (2)

Publication Number Publication Date
JPS54115626A true JPS54115626A (en) 1979-09-08
JPS5857515B2 JPS5857515B2 (en) 1983-12-20

Family

ID=12061027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53021654A Expired JPS5857515B2 (en) 1978-02-28 1978-02-28 electrode

Country Status (1)

Country Link
JP (1) JPS5857515B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521589A (en) * 1978-07-24 1980-02-15 Ppg Industries Inc Catalytic electrode
US4414064A (en) * 1979-12-17 1983-11-08 Occidental Chemical Corporation Method for preparing low voltage hydrogen cathodes
US4975760A (en) * 1986-03-06 1990-12-04 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521589A (en) * 1978-07-24 1980-02-15 Ppg Industries Inc Catalytic electrode
US4414064A (en) * 1979-12-17 1983-11-08 Occidental Chemical Corporation Method for preparing low voltage hydrogen cathodes
US4975760A (en) * 1986-03-06 1990-12-04 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device

Also Published As

Publication number Publication date
JPS5857515B2 (en) 1983-12-20

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