CN108611641A - A kind of engraving method of alloy etch liquid and alloy - Google Patents
A kind of engraving method of alloy etch liquid and alloy Download PDFInfo
- Publication number
- CN108611641A CN108611641A CN201810542965.1A CN201810542965A CN108611641A CN 108611641 A CN108611641 A CN 108611641A CN 201810542965 A CN201810542965 A CN 201810542965A CN 108611641 A CN108611641 A CN 108611641A
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- Prior art keywords
- alloy
- etch liquid
- present
- alloy etch
- etch
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
Abstract
The present invention provides a kind of alloy etch liquid, consist of the following compositions：Acetic acid：5~25wt%；Hydrogen peroxide：1~35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~5wt%；Surplus is deionized water.The present invention is directed to sandwich structure special in Fig. 1, uses acetic acid and dioxygen compatible, can effectively control the rate of etching, the etch-rate between different layers is made to reach consistent, improves etch effect.The experimental results showed that being etched to the three-layer alloy structure in Fig. 1 using alloy etch liquid in the application, etching interface is smooth, controllable-rate, and surface noresidue.The present invention also provides a kind of engraving methods of alloy.
Description
Technical field
The invention belongs to touch screen technology field more particularly to the engraving methods of a kind of alloy etch liquid and alloy.
Background technology
Metal grill technology is applied more and more extensive in large scale touch screen field, mainly uses the metal materials such as copper,
Compacting is formed by conductive metal lattice on film.But metal grill pattern, reflectivity are made using copper product
Too high, the product produced will produce serious bottom shadow.In order to improve bottom shadow effect, the reflectivity of copper cabling is reduced, generally
Using sandwich structure as shown in Figure 1, higher electric conductivity not only may be implemented, but also the reflectivity of cabling can be reduced, had realized
Bottom shadow is slight or even the effect of bottomless shadow.
But difficulty existing for this kind of structure is that the etch-rate between each layer is different, using existing etching solution to this
When the base material of structure is etched, etching degree is difficult to grasp, therefore, it is necessary to develop a kind of special etching solution allow different layers it
Between etch-rate reach consistent.
Invention content
The purpose of the present invention is to provide a kind of alloy etch liquid and a kind of alloy etch method, the alloy in the present invention loses
Carving liquid energy enough allows the etch-rate between different layers to reach consistent.
The present invention provides a kind of alloy etch liquid, consists of the following compositions：
Acetic acid：5~25wt%；Hydrogen peroxide：1~35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~
5wt%；Surplus is deionized water.
Preferably, the surfactant is sldium lauryl sulfate or lignosulfonates.
Preferably, the antifoaming agent is dimethyl silicone polymer.
Preferably, the mass fraction of the acetic acid is 10~20wt%.
Preferably, the mass fraction of the hydrogen peroxide is 20~30wt%.
Preferably, the mass fraction of the surfactant is 1.5~3wt%.
Preferably, the mass fraction of the antifoaming agent is 1.0~3wt%.
The present invention provides a kind of method of alloy etch, which is characterized in that used etching solution is erosion described above
Carve liquid；
The base material of the etching is trilamellar membrane layer structure, is followed successively by from top to bottom：First metal oxide layer, layers of copper and
Two metal oxide layers；
Include copper oxide, zinc oxide and aluminium oxide in first metal oxide layer；
Include copper oxide, zinc oxide and aluminium oxide in second metal oxide layer.
The present invention provides a kind of alloy etch liquid, consist of the following compositions：Acetic acid：5~25wt%；Hydrogen peroxide：1~
35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~5wt%；Surplus is deionized water.The present invention is directed in Fig. 1
Special sandwich structure uses acetic acid and dioxygen compatible, can effectively control the rate of etching, makes between different layers
Etch-rate reach consistent, improve etch effect.The experimental results showed that using alloy etch liquid in the application in Fig. 1
Three-layer alloy structure is etched, and etching interface is smooth, controllable-rate, and surface noresidue.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 by the present invention etching film layer structural schematic diagram.
Specific implementation mode
The present invention provides a kind of alloy etch liquid, consist of the following compositions：
Acetic acid：5~25wt%；Hydrogen peroxide：1~35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~
5wt%；Surplus is deionized water.
In the present invention, it due to the thinner thickness of copper oxide, in order to control reaction rate, needs to control hydrionic dense
Degree, the mass fraction of the acetic acid is preferably 5~25wt%, more preferably 10~20wt%, specifically, can be 5wt% or
10wt%；
The oxide of copper and other metal oxides are easy to the hydrogen ion reaction in solution, the hydrogen but fine copper is but got along well
Ionic reaction.In order to solve this problem, it allows in solution and oxidant is added.The mass fraction of the hydrogen peroxide is preferably 1~
35wt%, more preferably 20~30wt%, specifically, can be 20wt% or 30wt%；
The surfactant is preferably sldium lauryl sulfate or lignosulfonates, due to the master of etching solution in the present invention
Body is acetic acid and hydrogen peroxide, and the addition of the surfactant can make etching solution preferably soak film surface.The surface
The mass fraction of activating agent is preferably 0.1~5wt%, more preferably 1.5~3wt%.
There is bubble in spray in etching solution in order to prevent, and the present invention adds antifoaming agent, the defoaming in etching solution
Agent is preferably dimethyl silicone polymer, and the mass fraction of the antifoaming agent is preferably 0.1~5wt%, more preferably 1.0~
3wt%.
Specifically, in an embodiment of the present invention, the alloy etch liquid can be following several proportionings：
Acetic acid：5wt%；Hydrogen peroxide：20wt%；Surfactant：1.5wt%；Antifoaming agent：1.0wt%；Surplus be go from
Sub- water.
Acetic acid：10wt%；Hydrogen peroxide：20wt%；Surfactant：1.5wt%；Antifoaming agent：1.0wt%；Surplus is to go
Ionized water.
Acetic acid：10wt%；Hydrogen peroxide：30wt%；Surfactant：1.5wt%；Antifoaming agent：1.0wt%；Surplus is to go
Ionized water.
The present invention also provides a kind of method of alloy etch, the method in the present invention has used alloy described above to lose
Carve liquid；Also, the alloy etch liquid in the present invention is targetedly applied on trilamellar membrane layer structure shown in FIG. 1, is had
Etch-rate is controllable, and the effect that etch-rate is consistent.
In the present invention, in the structure shown in FIG. 1, the first metal oxide layer includes copper oxide, zinc oxide and oxygen
Change aluminium；The thickness of first metal oxide layer is preferably 200nm.
The ingredient of the layers of copper is fine copper.
Second metal oxide layer includes copper oxide, zinc oxide and aluminium oxide, second metal oxide layer
Thickness is preferably 200nm.
The present invention provides a kind of alloy etch liquid, consist of the following compositions：Acetic acid：5~25wt%；Hydrogen peroxide：1~
35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~5wt%；Surplus is deionized water.The present invention is directed in Fig. 1
Special sandwich structure uses acetic acid and dioxygen compatible, can effectively control the rate of etching, makes between different layers
Etch-rate reach consistent, improve etch effect.The experimental results showed that using alloy etch liquid in the application in Fig. 1
Three-layer alloy structure is etched, and etching interface is smooth, controllable-rate, and surface noresidue.
In order to further illustrate the present invention, with reference to embodiments to a kind of alloy etch liquid provided by the invention and alloy
The method of etching is described in detail, but cannot be understood as limiting the scope of the present invention.
Examples 1 to 3
According to the formula in table 1, it is configured to alloy etch liquid using deionized water, and be etched to structure shown in Fig. 1.
As a result such as table 3.
The ingredient of alloy etch liquid in 1 embodiment of the present invention 1~3 of table
| Embodiment | Acetic acid (%) | Hydrogen peroxide (%) | Surfactant (%) | Antifoaming agent (%) |
| 1 | 5 | 20 | 1.5 | 1.0 |
| 2 | 10 | 20 | 1.5 | 1.0 |
| 3 | 10 | 30 | 1.5 | 1.0 |
Surfactant in Examples 1 to 3 is sldium lauryl sulfate；Antifoaming agent is dimethyl silicone polymer.
Comparative example 1~3
According to the formula in table 2, it is configured to alloy etch liquid using deionized water, and lose to structure shown in Fig. 1
It carves.The results are shown in Table 3.
The formula of alloy etch liquid in 2 comparative example 1~3 of the present invention of table
The etch effect of alloy etch liquid in 3 embodiment of the present invention 1~3 of table and comparative example 1~3
By the comparison of embodiment 2 and comparative example 1 as it can be seen that strong acid has larger impact to the etching speed of copper, can influence to lose
The effect at quarter；
By the comparison of embodiment 1 and embodiment 2 as it can be seen that the etching speed of how many pairs of copper of acetic acid content has larger shadow
It rings, acetic acid content is too low to cause etching not to the utmost；
By the comparison of embodiment 2 and comparative example 3 as it can be seen that FeCl3It is not so good as hydrogen peroxide in terms of the rate of control etching.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (8)
1. a kind of alloy etch liquid, consists of the following compositions：
Acetic acid：5~25wt%；Hydrogen peroxide：1~35wt%；Surfactant：0.1~5wt%；Antifoaming agent：0.1~5wt%；
Surplus is deionized water.
2. alloy etch liquid according to claim 1, which is characterized in that the surfactant be sldium lauryl sulfate or
Lignosulfonates.
3. alloy etch liquid according to claim 1, which is characterized in that the antifoaming agent is dimethyl silicone polymer.
4. alloy etch liquid according to claim 1, which is characterized in that the mass fraction of the acetic acid be 10~
20wt%.
5. alloy etch liquid according to claim 1, which is characterized in that the mass fraction of the hydrogen peroxide be 20~
30wt%.
6. alloy etch liquid according to claim 1, which is characterized in that the mass fraction of the surfactant is 1.5
~3wt%.
7. alloy etch liquid according to claim 1, which is characterized in that the mass fraction of the antifoaming agent be 1.0~
3wt%.
8. a kind of method of alloy etch, which is characterized in that used etching solution is described in claim 1~7 any one
Etching solution；
The base material of the etching is trilamellar membrane layer structure, is followed successively by from top to bottom：First metal oxide layer, layers of copper and the second gold medal
Belong to oxide skin(coating)；
Include copper oxide, zinc oxide and aluminium oxide in first metal oxide layer；
Include copper oxide, zinc oxide and aluminium oxide in second metal oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810542965.1A CN108611641B (en) | 2018-05-30 | 2018-05-30 | Alloy etching solution and alloy etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810542965.1A CN108611641B (en) | 2018-05-30 | 2018-05-30 | Alloy etching solution and alloy etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108611641A true CN108611641A (en) | 2018-10-02 |
| CN108611641B CN108611641B (en) | 2020-05-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810542965.1A Active CN108611641B (en) | 2018-05-30 | 2018-05-30 | Alloy etching solution and alloy etching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110079803A (en) * | 2019-04-24 | 2019-08-02 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886265A (en) * | 2009-05-15 | 2010-11-17 | 关东化学株式会社 | Etching solution for copper-containing multilayer film |
| CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
| CN106757029A (en) * | 2017-02-08 | 2017-05-31 | 昆山艾森半导体材料有限公司 | A kind of small copper etchant solution of lateral erosion |
-
2018
- 2018-05-30 CN CN201810542965.1A patent/CN108611641B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886265A (en) * | 2009-05-15 | 2010-11-17 | 关东化学株式会社 | Etching solution for copper-containing multilayer film |
| CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
| CN106757029A (en) * | 2017-02-08 | 2017-05-31 | 昆山艾森半导体材料有限公司 | A kind of small copper etchant solution of lateral erosion |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110079803A (en) * | 2019-04-24 | 2019-08-02 | 深圳市华星光电技术有限公司 | Etching liquid, etch combinations liquid and lithographic method |
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| Publication number | Publication date |
|---|---|
| CN108611641B (en) | 2020-05-22 |
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