JPS54114969A - Secondary electron emission electrode and its manufacture - Google Patents

Secondary electron emission electrode and its manufacture

Info

Publication number
JPS54114969A
JPS54114969A JP2154178A JP2154178A JPS54114969A JP S54114969 A JPS54114969 A JP S54114969A JP 2154178 A JP2154178 A JP 2154178A JP 2154178 A JP2154178 A JP 2154178A JP S54114969 A JPS54114969 A JP S54114969A
Authority
JP
Japan
Prior art keywords
thin film
film layer
electron emission
secondary electron
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2154178A
Other languages
Japanese (ja)
Other versions
JPS6255265B2 (en
Inventor
Yoshihiko Mizushima
Shigetomo Yoshida
Nobuyoshi Koshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2154178A priority Critical patent/JPS54114969A/en
Publication of JPS54114969A publication Critical patent/JPS54114969A/en
Publication of JPS6255265B2 publication Critical patent/JPS6255265B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

PURPOSE: To obtain high secondary electron emission rate, by forming the perforated insulation thin film layer on the conductive substrate and remarkably improving the secondary electron emission performance with gas ion radiation.
CONSTITUTION: The perforated insulation thin film layer 3 is formed on the substrae 2, and DC voltage Vc is applied between the collection electrode 4 to collect the secondary electrons produced and the emission electrode 1. With this constitution, the ion flows are accelerated with DC voltage Vc, the surface of the emission electrode 1 is collided, emitting secondary electrons from the surface, and they are clooected with the collection electrode 4. With this construction, since the surface of the perforated insulation thin film layer is almost at the same potential as the collection electrode, strong potential is produced in this thin film layer, and the secondary electrons produced from the deep part emit from the surface while repeating multiplication by collision at the inside along the potential gradient.
COPYRIGHT: (C)1979,JPO&Japio
JP2154178A 1978-02-28 1978-02-28 Secondary electron emission electrode and its manufacture Granted JPS54114969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2154178A JPS54114969A (en) 1978-02-28 1978-02-28 Secondary electron emission electrode and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2154178A JPS54114969A (en) 1978-02-28 1978-02-28 Secondary electron emission electrode and its manufacture

Publications (2)

Publication Number Publication Date
JPS54114969A true JPS54114969A (en) 1979-09-07
JPS6255265B2 JPS6255265B2 (en) 1987-11-19

Family

ID=12057827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2154178A Granted JPS54114969A (en) 1978-02-28 1978-02-28 Secondary electron emission electrode and its manufacture

Country Status (1)

Country Link
JP (1) JPS54114969A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833348A (en) * 1971-08-31 1973-05-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833348A (en) * 1971-08-31 1973-05-09

Also Published As

Publication number Publication date
JPS6255265B2 (en) 1987-11-19

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