JPS54111789A - Nonnvolatile semiconductor memory - Google Patents

Nonnvolatile semiconductor memory

Info

Publication number
JPS54111789A
JPS54111789A JP962479A JP962479A JPS54111789A JP S54111789 A JPS54111789 A JP S54111789A JP 962479 A JP962479 A JP 962479A JP 962479 A JP962479 A JP 962479A JP S54111789 A JPS54111789 A JP S54111789A
Authority
JP
Japan
Prior art keywords
nonnvolatile
semiconductor memory
semiconductor
memory
nonnvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP962479A
Other languages
Japanese (ja)
Inventor
Edowaazu Kaanzu Jieemusu
Hendaason Utsuzu Maree
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS54111789A publication Critical patent/JPS54111789A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
JP962479A 1978-01-30 1979-01-29 Nonnvolatile semiconductor memory Pending JPS54111789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/873,603 US4307411A (en) 1978-01-30 1978-01-30 Nonvolatile semiconductor memory device and method of its manufacture

Publications (1)

Publication Number Publication Date
JPS54111789A true JPS54111789A (en) 1979-09-01

Family

ID=25361968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP962479A Pending JPS54111789A (en) 1978-01-30 1979-01-29 Nonnvolatile semiconductor memory

Country Status (5)

Country Link
US (1) US4307411A (en)
JP (1) JPS54111789A (en)
DE (1) DE2902367A1 (en)
GB (1) GB2013397B (en)
IT (1) IT1110013B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
US4521796A (en) * 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
US4605946A (en) * 1984-08-16 1986-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fet charge sensor and voltage probe
US4745083A (en) * 1986-11-19 1988-05-17 Sprague Electric Company Method of making a fast IGFET
JPH07120719B2 (en) * 1987-12-02 1995-12-20 三菱電機株式会社 Semiconductor memory device
US6518617B1 (en) * 1996-12-31 2003-02-11 Sony Corporation Nonvolatile semiconductor memory device
US6200843B1 (en) 1998-09-24 2001-03-13 International Business Machines Corporation High-voltage, high performance FETs
JP4657681B2 (en) 2004-06-03 2011-03-23 シャープ株式会社 Semiconductor memory device, method of manufacturing the same, and portable electronic device
US8330232B2 (en) * 2005-08-22 2012-12-11 Macronix International Co., Ltd. Nonvolatile memory device and method of forming the same
JP2016025100A (en) * 2014-07-16 2016-02-08 株式会社Ｊｏｌｅｄ Semiconductor device, display device, and electronic apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948282A (en) * 1972-09-13 1974-05-10
JPS52105784A (en) * 1976-03-01 1977-09-05 Sony Corp Mios type memory unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
JPS571149B2 (en) * 1974-08-28 1982-01-09

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948282A (en) * 1972-09-13 1974-05-10
JPS52105784A (en) * 1976-03-01 1977-09-05 Sony Corp Mios type memory unit

Also Published As

Publication number Publication date
US4307411A (en) 1981-12-22
IT1110013B (en) 1985-12-23
GB2013397B (en) 1982-05-19
IT7919301A0 (en) 1979-01-15
DE2902367A1 (en) 1979-08-02
GB2013397A (en) 1979-08-08

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