JPS54111789A - Nonnvolatile semiconductor memory - Google Patents
Nonnvolatile semiconductor memoryInfo
- Publication number
- JPS54111789A JPS54111789A JP962479A JP962479A JPS54111789A JP S54111789 A JPS54111789 A JP S54111789A JP 962479 A JP962479 A JP 962479A JP 962479 A JP962479 A JP 962479A JP S54111789 A JPS54111789 A JP S54111789A
- Authority
- JP
- Japan
- Prior art keywords
- nonnvolatile
- semiconductor memory
- semiconductor
- memory
- nonnvolatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/873,603 US4307411A (en) | 1978-01-30 | 1978-01-30 | Nonvolatile semiconductor memory device and method of its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54111789A true JPS54111789A (en) | 1979-09-01 |
Family
ID=25361968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP962479A Pending JPS54111789A (en) | 1978-01-30 | 1979-01-29 | Nonnvolatile semiconductor memory |
Country Status (5)
Country | Link |
---|---|
US (1) | US4307411A (en) |
JP (1) | JPS54111789A (en) |
DE (1) | DE2902367A1 (en) |
GB (1) | GB2013397B (en) |
IT (1) | IT1110013B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4353083A (en) * | 1978-11-27 | 1982-10-05 | Ncr Corporation | Low voltage nonvolatile memory device |
US4521796A (en) * | 1980-12-11 | 1985-06-04 | General Instrument Corporation | Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device |
US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
US4745083A (en) * | 1986-11-19 | 1988-05-17 | Sprague Electric Company | Method of making a fast IGFET |
JPH07120719B2 (en) * | 1987-12-02 | 1995-12-20 | 三菱電機株式会社 | Semiconductor memory device |
US6518617B1 (en) * | 1996-12-31 | 2003-02-11 | Sony Corporation | Nonvolatile semiconductor memory device |
US6200843B1 (en) | 1998-09-24 | 2001-03-13 | International Business Machines Corporation | High-voltage, high performance FETs |
JP4657681B2 (en) | 2004-06-03 | 2011-03-23 | シャープ株式会社 | Semiconductor memory device, method of manufacturing the same, and portable electronic device |
US8330232B2 (en) * | 2005-08-22 | 2012-12-11 | Macronix International Co., Ltd. | Nonvolatile memory device and method of forming the same |
JP2016025100A (en) * | 2014-07-16 | 2016-02-08 | 株式会社Joled | Semiconductor device, display device, and electronic apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948282A (en) * | 1972-09-13 | 1974-05-10 | ||
JPS52105784A (en) * | 1976-03-01 | 1977-09-05 | Sony Corp | Mios type memory unit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
JPS571149B2 (en) * | 1974-08-28 | 1982-01-09 |
-
1978
- 1978-01-30 US US05/873,603 patent/US4307411A/en not_active Expired - Lifetime
-
1979
- 1979-01-15 IT IT19301/79A patent/IT1110013B/en active
- 1979-01-19 GB GB7901981A patent/GB2013397B/en not_active Expired
- 1979-01-22 DE DE19792902367 patent/DE2902367A1/en not_active Withdrawn
- 1979-01-29 JP JP962479A patent/JPS54111789A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948282A (en) * | 1972-09-13 | 1974-05-10 | ||
JPS52105784A (en) * | 1976-03-01 | 1977-09-05 | Sony Corp | Mios type memory unit |
Also Published As
Publication number | Publication date |
---|---|
US4307411A (en) | 1981-12-22 |
IT1110013B (en) | 1985-12-23 |
GB2013397B (en) | 1982-05-19 |
IT7919301A0 (en) | 1979-01-15 |
DE2902367A1 (en) | 1979-08-02 |
GB2013397A (en) | 1979-08-08 |
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