JPS54105440A - Information memory and read system by electron beam - Google Patents

Information memory and read system by electron beam

Info

Publication number
JPS54105440A
JPS54105440A JP1214178A JP1214178A JPS54105440A JP S54105440 A JPS54105440 A JP S54105440A JP 1214178 A JP1214178 A JP 1214178A JP 1214178 A JP1214178 A JP 1214178A JP S54105440 A JPS54105440 A JP S54105440A
Authority
JP
Japan
Prior art keywords
thin film
information memory
medium
electron beam
chalcogenite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1214178A
Other languages
Japanese (ja)
Other versions
JPS574997B2 (en
Inventor
Sakae Maebotoke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1214178A priority Critical patent/JPS54105440A/en
Publication of JPS54105440A publication Critical patent/JPS54105440A/en
Publication of JPS574997B2 publication Critical patent/JPS574997B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to store binary information, "1" and "0", by forming regions with high and low secondary-electron emission ratios on an information memory medium of a chalcogenite thin film.
CONSTITUTION: Onto support plate 2 of a glass plate, electrode layer 3 is provided and on which chalcogenite thin film 4 with excitation effect is formed by the irradiation of write electron beam 5, thereby constituting information memory medium 1. With electrode layer 3 grounded, accelerated beam 5 of 10 to 20KV from the thin film 4 side is made to scan on medium 1 and then, regions (secondary-electron emission ratio N of one region irradiated with beam 5 is shown by curve A, and ratio N of the other irradiated with no beam is by curve B) with high and low secondary emission ratios are fromed on medium utilizing that thin film 4 shows the excitation effect through the irradiation of beam 5, so that binary information, "1" and "0", will be stored.
COPYRIGHT: (C)1979,JPO&Japio
JP1214178A 1978-02-06 1978-02-06 Information memory and read system by electron beam Granted JPS54105440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1214178A JPS54105440A (en) 1978-02-06 1978-02-06 Information memory and read system by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1214178A JPS54105440A (en) 1978-02-06 1978-02-06 Information memory and read system by electron beam

Publications (2)

Publication Number Publication Date
JPS54105440A true JPS54105440A (en) 1979-08-18
JPS574997B2 JPS574997B2 (en) 1982-01-28

Family

ID=11797223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1214178A Granted JPS54105440A (en) 1978-02-06 1978-02-06 Information memory and read system by electron beam

Country Status (1)

Country Link
JP (1) JPS54105440A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6875447B2 (en) 2019-04-15 2021-05-26 株式会社スギノマシン How to operate the pump device and pump

Also Published As

Publication number Publication date
JPS574997B2 (en) 1982-01-28

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