JPS54101679A - Inspection unit for life of semiconductor device - Google Patents

Inspection unit for life of semiconductor device

Info

Publication number
JPS54101679A
JPS54101679A JP855478A JP855478A JPS54101679A JP S54101679 A JPS54101679 A JP S54101679A JP 855478 A JP855478 A JP 855478A JP 855478 A JP855478 A JP 855478A JP S54101679 A JPS54101679 A JP S54101679A
Authority
JP
Japan
Prior art keywords
state
semiconductor device
binary
life
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP855478A
Other languages
Japanese (ja)
Inventor
Toshiharu Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP855478A priority Critical patent/JPS54101679A/en
Publication of JPS54101679A publication Critical patent/JPS54101679A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To detect faults such as tentative opening and short-circuit of a smaple semiconductor device and count the number of detection times in the life inspection of semiconductor devices.
CONSTITUTION: In case that measured transistor Qn generates characteristic fluctuation from a normal state and the current is reduced rapidly, the potential difference between both ends of resistance Rn is reduced rapidly, and a binary is set to counter 3 through a differentiating circuit consisting of C0 and R0, and the display according to this state is performed on display part 4. Next, in case that transistor Qn restores and the current increases rapidly, a negative pulse is inputted to Q0, and a binary is set to the counter through D2, and the display according to this state is performed on display part 4. Thus, the number of characteristic change times and normal characteristic restoration times is always displayed.
COPYRIGHT: (C)1979,JPO&Japio
JP855478A 1978-01-27 1978-01-27 Inspection unit for life of semiconductor device Pending JPS54101679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP855478A JPS54101679A (en) 1978-01-27 1978-01-27 Inspection unit for life of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP855478A JPS54101679A (en) 1978-01-27 1978-01-27 Inspection unit for life of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54101679A true JPS54101679A (en) 1979-08-10

Family

ID=11696327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP855478A Pending JPS54101679A (en) 1978-01-27 1978-01-27 Inspection unit for life of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5287055A (en) * 1990-01-09 1994-02-15 Siemens Automotive S.A. Circuit for measuring current in a power MOS transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5287055A (en) * 1990-01-09 1994-02-15 Siemens Automotive S.A. Circuit for measuring current in a power MOS transistor

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