JPS5397795A - Electrode forming method of piezoelectric vibrator - Google Patents

Electrode forming method of piezoelectric vibrator

Info

Publication number
JPS5397795A
JPS5397795A JP1287177A JP1287177A JPS5397795A JP S5397795 A JPS5397795 A JP S5397795A JP 1287177 A JP1287177 A JP 1287177A JP 1287177 A JP1287177 A JP 1287177A JP S5397795 A JPS5397795 A JP S5397795A
Authority
JP
Japan
Prior art keywords
forming method
piezoelectric vibrator
electrode forming
vapor deposition
vibrators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1287177A
Other languages
Japanese (ja)
Inventor
Makoto Wakasugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP1287177A priority Critical patent/JPS5397795A/en
Priority to US05/864,271 priority patent/US4252839A/en
Priority to GB54107/77A priority patent/GB1594980A/en
Publication of JPS5397795A publication Critical patent/JPS5397795A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/21—Crystal tuning forks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE:To form electrodes by forming thin-walled parts whose thickness is made less than that in the contact face direction with vibrators to part of a mask for vapor deposition and letting vapor deposition substance go round through the clearances between said thin-walled parts and the vibrators thereby performing vapor deposition.
JP1287177A 1976-12-29 1977-02-08 Electrode forming method of piezoelectric vibrator Pending JPS5397795A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1287177A JPS5397795A (en) 1977-02-08 1977-02-08 Electrode forming method of piezoelectric vibrator
US05/864,271 US4252839A (en) 1976-12-29 1977-12-27 Tuning fork-type quartz crystal vibrator and method of forming the same
GB54107/77A GB1594980A (en) 1976-12-29 1977-12-29 Tuning fork-type quartz crystal vibrator and method of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1287177A JPS5397795A (en) 1977-02-08 1977-02-08 Electrode forming method of piezoelectric vibrator

Publications (1)

Publication Number Publication Date
JPS5397795A true JPS5397795A (en) 1978-08-26

Family

ID=11817475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1287177A Pending JPS5397795A (en) 1976-12-29 1977-02-08 Electrode forming method of piezoelectric vibrator

Country Status (1)

Country Link
JP (1) JPS5397795A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170005120A (en) 2014-07-22 2017-01-11 가부시키가이샤 플로스피아 Crystalline semiconductor film, plate-like body and semiconductor device
US10460934B2 (en) 2017-08-21 2019-10-29 Flosfia Inc. Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170005120A (en) 2014-07-22 2017-01-11 가부시키가이샤 플로스피아 Crystalline semiconductor film, plate-like body and semiconductor device
KR20180118823A (en) 2014-07-22 2018-10-31 가부시키가이샤 플로스피아 Crystalline semiconductor film, plate-like body and semiconductor device
US10460934B2 (en) 2017-08-21 2019-10-29 Flosfia Inc. Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

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