JPS5394570U - - Google Patents
Info
- Publication number
- JPS5394570U JPS5394570U JP17831276U JP17831276U JPS5394570U JP S5394570 U JPS5394570 U JP S5394570U JP 17831276 U JP17831276 U JP 17831276U JP 17831276 U JP17831276 U JP 17831276U JP S5394570 U JPS5394570 U JP S5394570U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17831276U JPS5394570U (ja) | 1976-12-29 | 1976-12-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17831276U JPS5394570U (ja) | 1976-12-29 | 1976-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5394570U true JPS5394570U (ja) | 1978-08-01 |
Family
ID=28785545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17831276U Pending JPS5394570U (ja) | 1976-12-29 | 1976-12-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5394570U (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63172435A (ja) * | 1987-01-09 | 1988-07-16 | Matsushita Electronics Corp | 半導体装置 |
JPH0964139A (ja) * | 1995-08-28 | 1997-03-07 | Nec Corp | 絶縁ゲート電界効果トランジスタの評価素子とそれを用いた評価回路および評価方法 |
JP2016174063A (ja) * | 2015-03-17 | 2016-09-29 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および回路システム |
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1976
- 1976-12-29 JP JP17831276U patent/JPS5394570U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63172435A (ja) * | 1987-01-09 | 1988-07-16 | Matsushita Electronics Corp | 半導体装置 |
JPH0964139A (ja) * | 1995-08-28 | 1997-03-07 | Nec Corp | 絶縁ゲート電界効果トランジスタの評価素子とそれを用いた評価回路および評価方法 |
JP2016174063A (ja) * | 2015-03-17 | 2016-09-29 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および回路システム |