JPS5376683A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS5376683A
JPS5376683A JP15251876A JP15251876A JPS5376683A JP S5376683 A JPS5376683 A JP S5376683A JP 15251876 A JP15251876 A JP 15251876A JP 15251876 A JP15251876 A JP 15251876A JP S5376683 A JPS5376683 A JP S5376683A
Authority
JP
Japan
Prior art keywords
charge transfer
transfer element
linearity
permits
improvement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15251876A
Other languages
Japanese (ja)
Other versions
JPS5429872B2 (en
Inventor
Yoshihiro Hosokawa
Masakazu Akiyama
Kazuhiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15251876A priority Critical patent/JPS5376683A/en
Publication of JPS5376683A publication Critical patent/JPS5376683A/en
Publication of JPS5429872B2 publication Critical patent/JPS5429872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To obtain a charge transfer element which permits the improvement in the linearity of input-output converting part while transfer loss is maintained low.
JP15251876A 1976-12-17 1976-12-17 Charge transfer element Granted JPS5376683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15251876A JPS5376683A (en) 1976-12-17 1976-12-17 Charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15251876A JPS5376683A (en) 1976-12-17 1976-12-17 Charge transfer element

Publications (2)

Publication Number Publication Date
JPS5376683A true JPS5376683A (en) 1978-07-07
JPS5429872B2 JPS5429872B2 (en) 1979-09-26

Family

ID=15542186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15251876A Granted JPS5376683A (en) 1976-12-17 1976-12-17 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS5376683A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553458A (en) * 1978-10-16 1980-04-18 Nec Corp Charge coupled element
JPS5698865A (en) * 1980-01-09 1981-08-08 Nec Corp Charge coupled device
JPS57126166A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Charge transfer device
JPS6370453A (en) * 1986-09-11 1988-03-30 Fuji Photo Film Co Ltd Charge accumulating device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519583A (en) * 1974-07-12 1976-01-26 Sony Corp DENKAISOSOSHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519583A (en) * 1974-07-12 1976-01-26 Sony Corp DENKAISOSOSHI

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553458A (en) * 1978-10-16 1980-04-18 Nec Corp Charge coupled element
JPS5698865A (en) * 1980-01-09 1981-08-08 Nec Corp Charge coupled device
JPS57126166A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Charge transfer device
JPS6370453A (en) * 1986-09-11 1988-03-30 Fuji Photo Film Co Ltd Charge accumulating device

Also Published As

Publication number Publication date
JPS5429872B2 (en) 1979-09-26

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