JPS5370681A - Charge transfer semiconductor device - Google Patents

Charge transfer semiconductor device

Info

Publication number
JPS5370681A
JPS5370681A JP14615976A JP14615976A JPS5370681A JP S5370681 A JPS5370681 A JP S5370681A JP 14615976 A JP14615976 A JP 14615976A JP 14615976 A JP14615976 A JP 14615976A JP S5370681 A JPS5370681 A JP S5370681A
Authority
JP
Japan
Prior art keywords
semiconductor device
charge transfer
transfer semiconductor
transfer
decrease
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14615976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5519062B2 (OSRAM
Inventor
Hiroyuki Kikuchi
Tsuneo Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14615976A priority Critical patent/JPS5370681A/ja
Publication of JPS5370681A publication Critical patent/JPS5370681A/ja
Publication of JPS5519062B2 publication Critical patent/JPS5519062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP14615976A 1976-12-07 1976-12-07 Charge transfer semiconductor device Granted JPS5370681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14615976A JPS5370681A (en) 1976-12-07 1976-12-07 Charge transfer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14615976A JPS5370681A (en) 1976-12-07 1976-12-07 Charge transfer semiconductor device

Publications (2)

Publication Number Publication Date
JPS5370681A true JPS5370681A (en) 1978-06-23
JPS5519062B2 JPS5519062B2 (OSRAM) 1980-05-23

Family

ID=15401455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14615976A Granted JPS5370681A (en) 1976-12-07 1976-12-07 Charge transfer semiconductor device

Country Status (1)

Country Link
JP (1) JPS5370681A (OSRAM)

Also Published As

Publication number Publication date
JPS5519062B2 (OSRAM) 1980-05-23

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