JPS5364434A - Sense circuit of mos semiconductor memory - Google Patents

Sense circuit of mos semiconductor memory

Info

Publication number
JPS5364434A
JPS5364434A JP14005376A JP14005376A JPS5364434A JP S5364434 A JPS5364434 A JP S5364434A JP 14005376 A JP14005376 A JP 14005376A JP 14005376 A JP14005376 A JP 14005376A JP S5364434 A JPS5364434 A JP S5364434A
Authority
JP
Japan
Prior art keywords
sense circuit
semiconductor memory
mos semiconductor
mos
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14005376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5747511B2 (enrdf_load_stackoverflow
Inventor
Yasuharu Nagayama
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14005376A priority Critical patent/JPS5364434A/ja
Publication of JPS5364434A publication Critical patent/JPS5364434A/ja
Publication of JPS5747511B2 publication Critical patent/JPS5747511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP14005376A 1976-11-19 1976-11-19 Sense circuit of mos semiconductor memory Granted JPS5364434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14005376A JPS5364434A (en) 1976-11-19 1976-11-19 Sense circuit of mos semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14005376A JPS5364434A (en) 1976-11-19 1976-11-19 Sense circuit of mos semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5364434A true JPS5364434A (en) 1978-06-08
JPS5747511B2 JPS5747511B2 (enrdf_load_stackoverflow) 1982-10-09

Family

ID=15259881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14005376A Granted JPS5364434A (en) 1976-11-19 1976-11-19 Sense circuit of mos semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5364434A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522217A (en) * 1978-07-28 1980-02-16 Fujitsu Ltd Reset circuit
JPH02263393A (ja) * 1989-04-03 1990-10-26 Nec Ic Microcomput Syst Ltd 半導体装置
JPH02263394A (ja) * 1989-04-03 1990-10-26 Nec Ic Microcomput Syst Ltd 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175135U (ja) * 1982-05-19 1983-11-22 株式会社クボタ 携帯形エンジン発電機
JPS61142618U (enrdf_load_stackoverflow) * 1985-02-27 1986-09-03

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115623A (enrdf_load_stackoverflow) * 1973-02-23 1974-11-05
JPS49131744A (enrdf_load_stackoverflow) * 1973-04-18 1974-12-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115623A (enrdf_load_stackoverflow) * 1973-02-23 1974-11-05
JPS49131744A (enrdf_load_stackoverflow) * 1973-04-18 1974-12-17

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522217A (en) * 1978-07-28 1980-02-16 Fujitsu Ltd Reset circuit
JPH02263393A (ja) * 1989-04-03 1990-10-26 Nec Ic Microcomput Syst Ltd 半導体装置
JPH02263394A (ja) * 1989-04-03 1990-10-26 Nec Ic Microcomput Syst Ltd 半導体装置

Also Published As

Publication number Publication date
JPS5747511B2 (enrdf_load_stackoverflow) 1982-10-09

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