JPS5358735A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5358735A
JPS5358735A JP13349176A JP13349176A JPS5358735A JP S5358735 A JPS5358735 A JP S5358735A JP 13349176 A JP13349176 A JP 13349176A JP 13349176 A JP13349176 A JP 13349176A JP S5358735 A JPS5358735 A JP S5358735A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
information
memory
memorized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13349176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5758760B2 (enExample
Inventor
Kanichi Harima
Kenzo Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13349176A priority Critical patent/JPS5358735A/ja
Publication of JPS5358735A publication Critical patent/JPS5358735A/ja
Publication of JPS5758760B2 publication Critical patent/JPS5758760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP13349176A 1976-11-06 1976-11-06 Semiconductor memory unit Granted JPS5358735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13349176A JPS5358735A (en) 1976-11-06 1976-11-06 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13349176A JPS5358735A (en) 1976-11-06 1976-11-06 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5358735A true JPS5358735A (en) 1978-05-26
JPS5758760B2 JPS5758760B2 (enExample) 1982-12-10

Family

ID=15106001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13349176A Granted JPS5358735A (en) 1976-11-06 1976-11-06 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5358735A (enExample)

Also Published As

Publication number Publication date
JPS5758760B2 (enExample) 1982-12-10

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