JPS5348073B2 - - Google Patents
Info
- Publication number
- JPS5348073B2 JPS5348073B2 JP9997372A JP9997372A JPS5348073B2 JP S5348073 B2 JPS5348073 B2 JP S5348073B2 JP 9997372 A JP9997372 A JP 9997372A JP 9997372 A JP9997372 A JP 9997372A JP S5348073 B2 JPS5348073 B2 JP S5348073B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20102471A | 1971-11-22 | 1971-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4860574A JPS4860574A (en) | 1973-08-24 |
JPS5348073B2 true JPS5348073B2 (en) | 1978-12-26 |
Family
ID=22744168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9997372A Expired JPS5348073B2 (en) | 1971-11-22 | 1972-10-06 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5348073B2 (en) |
DE (1) | DE2250990A1 (en) |
FR (1) | FR2160830B1 (en) |
GB (1) | GB1372779A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5410667A (en) * | 1977-06-27 | 1979-01-26 | Hitachi Ltd | Semiconductor device |
NL8006827A (en) * | 1980-12-17 | 1982-07-16 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
JPS57128953A (en) * | 1981-02-02 | 1982-08-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328213A (en) * | 1963-11-26 | 1967-06-27 | Int Rectifier Corp | Method for growing silicon film |
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1972
- 1972-09-05 GB GB4108472A patent/GB1372779A/en not_active Expired
- 1972-10-06 JP JP9997372A patent/JPS5348073B2/ja not_active Expired
- 1972-10-18 DE DE19722250990 patent/DE2250990A1/en active Pending
- 1972-10-25 FR FR7238491A patent/FR2160830B1/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328213A (en) * | 1963-11-26 | 1967-06-27 | Int Rectifier Corp | Method for growing silicon film |
Also Published As
Publication number | Publication date |
---|---|
GB1372779A (en) | 1974-11-06 |
JPS4860574A (en) | 1973-08-24 |
FR2160830A1 (en) | 1973-07-06 |
DE2250990A1 (en) | 1973-05-24 |
FR2160830B1 (en) | 1974-08-19 |