JPS5346702B2 - - Google Patents

Info

Publication number
JPS5346702B2
JPS5346702B2 JP3093076A JP3093076A JPS5346702B2 JP S5346702 B2 JPS5346702 B2 JP S5346702B2 JP 3093076 A JP3093076 A JP 3093076A JP 3093076 A JP3093076 A JP 3093076A JP S5346702 B2 JPS5346702 B2 JP S5346702B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3093076A
Other languages
Japanese (ja)
Other versions
JPS51123083A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51123083A publication Critical patent/JPS51123083A/ja
Publication of JPS5346702B2 publication Critical patent/JPS5346702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP51030930A 1975-04-03 1976-03-23 Integrated semiconductor device Granted JPS51123083A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752514466 DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung

Publications (2)

Publication Number Publication Date
JPS51123083A JPS51123083A (en) 1976-10-27
JPS5346702B2 true JPS5346702B2 (US20020095090A1-20020718-M00002.png) 1978-12-15

Family

ID=5942969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51030930A Granted JPS51123083A (en) 1975-04-03 1976-03-23 Integrated semiconductor device

Country Status (5)

Country Link
US (1) US4024417A (US20020095090A1-20020718-M00002.png)
JP (1) JPS51123083A (US20020095090A1-20020718-M00002.png)
DE (1) DE2514466B2 (US20020095090A1-20020718-M00002.png)
FR (1) FR2313777A1 (US20020095090A1-20020718-M00002.png)
IT (1) IT1056804B (US20020095090A1-20020718-M00002.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852315U (ja) * 1981-10-06 1983-04-09 日立建機株式会社 ピン結合装置
JPS6340647Y2 (US20020095090A1-20020718-M00002.png) * 1981-03-06 1988-10-24

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148491A (en) * 1978-05-15 1979-11-20 Nec Corp Semiconductor integrated circuit
US4223238A (en) * 1978-08-17 1980-09-16 Motorola, Inc. Integrated circuit substrate charge pump
US4298334A (en) * 1979-11-26 1981-11-03 Honeywell Inc. Dynamically checked safety load switching circuit
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
US4581547A (en) * 1984-02-22 1986-04-08 Motorola, Inc. Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate
US4577211A (en) * 1984-04-02 1986-03-18 Motorola, Inc. Integrated circuit and method for biasing an epitaxial layer
JPS61127165A (ja) * 1984-11-24 1986-06-14 Sharp Corp 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
US6839211B2 (en) * 2002-02-21 2005-01-04 Broadcom Corporation Methods and systems for reducing power-on failure of integrated circuits
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA886210A (en) * 1971-11-16 Northern Electric Company Limited High-low voltage detector
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
US3725675A (en) * 1971-03-29 1973-04-03 Honeywell Inf Systems Power sequencing control circuit
GB1405503A (en) * 1972-11-16 1975-09-10 Texas Instruments Inc Integrated circuits
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340647Y2 (US20020095090A1-20020718-M00002.png) * 1981-03-06 1988-10-24
JPS5852315U (ja) * 1981-10-06 1983-04-09 日立建機株式会社 ピン結合装置

Also Published As

Publication number Publication date
FR2313777B1 (US20020095090A1-20020718-M00002.png) 1979-02-02
DE2514466A1 (de) 1976-10-14
JPS51123083A (en) 1976-10-27
FR2313777A1 (fr) 1976-12-31
DE2514466B2 (de) 1977-04-21
US4024417A (en) 1977-05-17
IT1056804B (it) 1982-02-20

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