JPS5342230B2 - - Google Patents

Info

Publication number
JPS5342230B2
JPS5342230B2 JP10511472A JP10511472A JPS5342230B2 JP S5342230 B2 JPS5342230 B2 JP S5342230B2 JP 10511472 A JP10511472 A JP 10511472A JP 10511472 A JP10511472 A JP 10511472A JP S5342230 B2 JPS5342230 B2 JP S5342230B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10511472A
Other languages
Japanese (ja)
Other versions
JPS4963381A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10511472A priority Critical patent/JPS5342230B2/ja
Priority to US00407605A priority patent/US3854447A/en
Priority to CA183,673A priority patent/CA1012447A/en
Priority to DE19732352605 priority patent/DE2352605C3/de
Priority to GB4876873A priority patent/GB1451803A/en
Publication of JPS4963381A publication Critical patent/JPS4963381A/ja
Publication of JPS5342230B2 publication Critical patent/JPS5342230B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/065—Multiple stacked slider system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/064—Rotating sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP10511472A 1972-10-19 1972-10-19 Expired JPS5342230B2 (enrdf_load_stackoverflow)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10511472A JPS5342230B2 (enrdf_load_stackoverflow) 1972-10-19 1972-10-19
US00407605A US3854447A (en) 1972-10-19 1973-10-18 Apparatus for deposition of semiconductor thin layers
CA183,673A CA1012447A (en) 1972-10-19 1973-10-18 Apparatus for deposition of semiconductor thin layers
DE19732352605 DE2352605C3 (de) 1972-10-19 1973-10-19 Aufwachsschiff für Flüssigphasenepitaxie
GB4876873A GB1451803A (en) 1972-10-19 1973-10-19 Apapratus for deposition of semic9nductor thin layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10511472A JPS5342230B2 (enrdf_load_stackoverflow) 1972-10-19 1972-10-19

Publications (2)

Publication Number Publication Date
JPS4963381A JPS4963381A (enrdf_load_stackoverflow) 1974-06-19
JPS5342230B2 true JPS5342230B2 (enrdf_load_stackoverflow) 1978-11-09

Family

ID=14398792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10511472A Expired JPS5342230B2 (enrdf_load_stackoverflow) 1972-10-19 1972-10-19

Country Status (4)

Country Link
US (1) US3854447A (enrdf_load_stackoverflow)
JP (1) JPS5342230B2 (enrdf_load_stackoverflow)
CA (1) CA1012447A (enrdf_load_stackoverflow)
GB (1) GB1451803A (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device
FR2251369B1 (enrdf_load_stackoverflow) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS50110570A (enrdf_load_stackoverflow) * 1974-02-07 1975-08-30
JPS50119566A (enrdf_load_stackoverflow) * 1974-03-01 1975-09-19
JPS5129384A (ja) * 1974-09-06 1976-03-12 Oki Electric Ind Co Ltd Ekisoepitakisharuseichoho
FR2296264A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de realisation de dispositif semi-conducteur a heterojonction
JPS51131270A (en) * 1975-05-09 1976-11-15 Matsushita Electric Ind Co Ltd Semi-conductor manufacturing unit
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
JPS5384459A (en) * 1976-12-29 1978-07-25 Fujitsu Ltd Liquid-phase epitaxial growth device
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
JPS55137381U (enrdf_load_stackoverflow) * 1979-03-22 1980-09-30
US4412502A (en) * 1981-06-25 1983-11-01 Western Electric Co., Inc. Apparatus for the elimination of edge growth in liquid phase epitaxy
US4390379A (en) * 1981-06-25 1983-06-28 Western Electric Company, Inc. Elimination of edge growth in liquid phase epitaxy
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600341A (enrdf_load_stackoverflow) * 1968-12-31 1970-07-20
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
BE791927A (fr) * 1971-11-29 1973-03-16 Western Electric Co Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Also Published As

Publication number Publication date
DE2352605A1 (de) 1974-05-09
GB1451803A (en) 1976-10-06
US3854447A (en) 1974-12-17
JPS4963381A (enrdf_load_stackoverflow) 1974-06-19
DE2352605B2 (de) 1976-09-09
CA1012447A (en) 1977-06-21

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