JPS5341076B2 - - Google Patents
Info
- Publication number
- JPS5341076B2 JPS5341076B2 JP3499475A JP3499475A JPS5341076B2 JP S5341076 B2 JPS5341076 B2 JP S5341076B2 JP 3499475 A JP3499475 A JP 3499475A JP 3499475 A JP3499475 A JP 3499475A JP S5341076 B2 JPS5341076 B2 JP S5341076B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3499475A JPS51110276A (ja) | 1975-03-25 | 1975-03-25 | Gasuetsuchingusochi |
| US05/647,448 US4123663A (en) | 1975-01-22 | 1976-01-08 | Gas-etching device |
| DE2601288A DE2601288B2 (de) | 1975-01-22 | 1976-01-15 | Gas-Ätzvorrichtung |
| US05/933,846 US4192706A (en) | 1975-01-22 | 1978-08-15 | Gas-etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3499475A JPS51110276A (ja) | 1975-03-25 | 1975-03-25 | Gasuetsuchingusochi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51110276A JPS51110276A (ja) | 1976-09-29 |
| JPS5341076B2 true JPS5341076B2 (oth) | 1978-10-31 |
Family
ID=12429683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3499475A Granted JPS51110276A (ja) | 1975-01-22 | 1975-03-25 | Gasuetsuchingusochi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51110276A (oth) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615799Y2 (oth) * | 1976-11-15 | 1986-02-21 | ||
| JPS53112065A (en) * | 1977-03-11 | 1978-09-30 | Toshiba Corp | Removing method of high molecular compound |
| JPS5449073A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Plasma processing unit |
| JPS5511360A (en) * | 1978-07-11 | 1980-01-26 | Tokyo Ohka Kogyo Co Ltd | Plasma reaction treating system |
| JPS5610909Y2 (oth) * | 1978-07-26 | 1981-03-12 | ||
| JPS5944770B2 (ja) * | 1980-07-25 | 1984-11-01 | 三菱電機株式会社 | プラズマｃｖｄ用反応器の洗浄方法 |
| JPS5789226A (en) * | 1980-11-19 | 1982-06-03 | Ibm | Method of etching silicon nitride layer |
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1975
- 1975-03-25 JP JP3499475A patent/JPS51110276A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51110276A (ja) | 1976-09-29 |