JPS5339442B2 - - Google Patents

Info

Publication number
JPS5339442B2
JPS5339442B2 JP2173472A JP2173472A JPS5339442B2 JP S5339442 B2 JPS5339442 B2 JP S5339442B2 JP 2173472 A JP2173472 A JP 2173472A JP 2173472 A JP2173472 A JP 2173472A JP S5339442 B2 JPS5339442 B2 JP S5339442B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2173472A
Other languages
Japanese (ja)
Other versions
JPS4889918A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2173472A priority Critical patent/JPS5339442B2/ja
Priority to US336345A priority patent/US3925179A/en
Priority to DE2310284A priority patent/DE2310284C3/de
Priority to GB999573A priority patent/GB1404076A/en
Priority to FR7307369A priority patent/FR2174252B1/fr
Priority to NL7302981.A priority patent/NL159147B/xx
Publication of JPS4889918A publication Critical patent/JPS4889918A/ja
Publication of JPS5339442B2 publication Critical patent/JPS5339442B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Glass (AREA)
JP2173472A 1972-03-02 1972-03-02 Expired JPS5339442B2 (en:Method)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2173472A JPS5339442B2 (en:Method) 1972-03-02 1972-03-02
US336345A US3925179A (en) 1972-03-02 1973-02-27 Method of electrically depositing glass particles on objective body
DE2310284A DE2310284C3 (de) 1972-03-02 1973-03-01 Verfahren zum elektrischem Aufbringen von Glasteilchen auf einen Körper aus Halbleitermaterial
GB999573A GB1404076A (en) 1972-03-02 1973-03-01 Method of electrically depositing glass particles
FR7307369A FR2174252B1 (en:Method) 1972-03-02 1973-03-01
NL7302981.A NL159147B (nl) 1972-03-02 1973-03-02 Werkwijze voor het elektroforetisch afzetten van glasdeeltjes op een halfgeleiderlichaam.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2173472A JPS5339442B2 (en:Method) 1972-03-02 1972-03-02

Publications (2)

Publication Number Publication Date
JPS4889918A JPS4889918A (en:Method) 1973-11-24
JPS5339442B2 true JPS5339442B2 (en:Method) 1978-10-21

Family

ID=12063290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2173472A Expired JPS5339442B2 (en:Method) 1972-03-02 1972-03-02

Country Status (6)

Country Link
US (1) US3925179A (en:Method)
JP (1) JPS5339442B2 (en:Method)
DE (1) DE2310284C3 (en:Method)
FR (1) FR2174252B1 (en:Method)
GB (1) GB1404076A (en:Method)
NL (1) NL159147B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551703B2 (en:Method) * 1972-07-07 1980-01-16
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
IT1099126B (it) * 1978-09-21 1985-09-18 Ates Componenti Elettron Bagno per la deposizione mediante elettroforesi di un rivestimento isolante su un corpo semiconduttore
US4595473A (en) * 1984-08-28 1986-06-17 Trw Inc. Forging lubricant
DE19520458A1 (de) * 1995-06-03 1996-12-05 Forschungszentrum Juelich Gmbh Vorrichtung zur elektrophoretischen Beschichtung von Substraten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE666930C (de) * 1936-09-26 1938-11-01 Philips Patentverwaltung Verfahren zum Herstellen einer Deckschicht
US2321439A (en) * 1936-09-26 1943-06-08 Hartford Nat Bank & Trust Co Method of making vitreous coated bodies
US3163592A (en) * 1960-09-01 1964-12-29 Sylvania Electric Prod Process for electrophoretically applying a coating of phosphor
US3280019A (en) * 1963-07-03 1966-10-18 Ibm Method of selectively coating semiconductor chips
US3379625A (en) * 1964-03-30 1968-04-23 Gen Electric Semiconductor testing
US3642597A (en) * 1970-03-20 1972-02-15 Gen Electric Semiconductor passivating process

Also Published As

Publication number Publication date
FR2174252A1 (en:Method) 1973-10-12
DE2310284A1 (de) 1973-09-20
US3925179A (en) 1975-12-09
JPS4889918A (en:Method) 1973-11-24
GB1404076A (en) 1975-08-28
FR2174252B1 (en:Method) 1976-05-21
USB336345I5 (en:Method) 1975-01-28
NL7302981A (en:Method) 1973-09-04
DE2310284B2 (de) 1978-05-24
NL159147B (nl) 1979-01-15
DE2310284C3 (de) 1979-01-18

Similar Documents

Publication Publication Date Title
FR2174252B1 (en:Method)
FR2189133B3 (en:Method)
JPS4931711A (en:Method)
JPS551703B2 (en:Method)
CS163294B2 (en:Method)
JPS4934499A (en:Method)
JPS4974031A (en:Method)
JPS4929991U (en:Method)
JPS5635624B2 (en:Method)
FR2167750A1 (en:Method)
JPS497851U (en:Method)
JPS4962842A (en:Method)
JPS4961721U (en:Method)
CS163441B1 (en:Method)
CS154169B1 (en:Method)
JPS4966640U (en:Method)
JPS4970080A (en:Method)
JPS4991311U (en:Method)
CS158033B1 (en:Method)
JPS4984126A (en:Method)
CS163432B1 (en:Method)
JPS4996273U (en:Method)
CS162961B1 (en:Method)
CS162943B1 (en:Method)
CS161947B2 (en:Method)