JPS5338942B2 - - Google Patents

Info

Publication number
JPS5338942B2
JPS5338942B2 JP12757272A JP12757272A JPS5338942B2 JP S5338942 B2 JPS5338942 B2 JP S5338942B2 JP 12757272 A JP12757272 A JP 12757272A JP 12757272 A JP12757272 A JP 12757272A JP S5338942 B2 JPS5338942 B2 JP S5338942B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12757272A
Other languages
Japanese (ja)
Other versions
JPS4984693A (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12757272A priority Critical patent/JPS5338942B2/ja
Priority to DE19732347328 priority patent/DE2347328A1/de
Publication of JPS4984693A publication Critical patent/JPS4984693A/ja
Publication of JPS5338942B2 publication Critical patent/JPS5338942B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP12757272A 1972-12-19 1972-12-19 Expired JPS5338942B2 (cs)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12757272A JPS5338942B2 (cs) 1972-12-19 1972-12-19
DE19732347328 DE2347328A1 (de) 1972-12-19 1973-09-20 Fotoelektrische halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12757272A JPS5338942B2 (cs) 1972-12-19 1972-12-19

Publications (2)

Publication Number Publication Date
JPS4984693A JPS4984693A (cs) 1974-08-14
JPS5338942B2 true JPS5338942B2 (cs) 1978-10-18

Family

ID=14963348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12757272A Expired JPS5338942B2 (cs) 1972-12-19 1972-12-19

Country Status (2)

Country Link
JP (1) JPS5338942B2 (cs)
DE (1) DE2347328A1 (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589984Y2 (ja) * 1977-10-04 1983-02-23 ワイケイケイ株式会社 開口部枠

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589984Y2 (ja) * 1977-10-04 1983-02-23 ワイケイケイ株式会社 開口部枠

Also Published As

Publication number Publication date
DE2347328A1 (de) 1974-07-11
JPS4984693A (cs) 1974-08-14

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