JPS5336461A - Growing device for silicon ribbon crystal - Google Patents

Growing device for silicon ribbon crystal

Info

Publication number
JPS5336461A
JPS5336461A JP11082376A JP11082376A JPS5336461A JP S5336461 A JPS5336461 A JP S5336461A JP 11082376 A JP11082376 A JP 11082376A JP 11082376 A JP11082376 A JP 11082376A JP S5336461 A JPS5336461 A JP S5336461A
Authority
JP
Japan
Prior art keywords
growing device
ribbon crystal
silicon ribbon
crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11082376A
Other languages
Japanese (ja)
Other versions
JPS54468B2 (en
Inventor
Naoaki Maki
Toshiro Matsui
Hiroshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11082376A priority Critical patent/JPS5336461A/en
Publication of JPS5336461A publication Critical patent/JPS5336461A/en
Publication of JPS54468B2 publication Critical patent/JPS54468B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To produce an Si ribbon crystal in accordance with the die shape by using the carbon featuring the crystal particle of under 250Å and the bending strength of over 400kg/cm2 for the die material.
COPYRIGHT: (C)1978,JPO&Japio
JP11082376A 1976-09-17 1976-09-17 Growing device for silicon ribbon crystal Granted JPS5336461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11082376A JPS5336461A (en) 1976-09-17 1976-09-17 Growing device for silicon ribbon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11082376A JPS5336461A (en) 1976-09-17 1976-09-17 Growing device for silicon ribbon crystal

Publications (2)

Publication Number Publication Date
JPS5336461A true JPS5336461A (en) 1978-04-04
JPS54468B2 JPS54468B2 (en) 1979-01-11

Family

ID=14545553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11082376A Granted JPS5336461A (en) 1976-09-17 1976-09-17 Growing device for silicon ribbon crystal

Country Status (1)

Country Link
JP (1) JPS5336461A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50153569A (en) * 1974-05-29 1975-12-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50153569A (en) * 1974-05-29 1975-12-10

Also Published As

Publication number Publication date
JPS54468B2 (en) 1979-01-11

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