JPS5336431B2 - - Google Patents

Info

Publication number
JPS5336431B2
JPS5336431B2 JP11008473A JP11008473A JPS5336431B2 JP S5336431 B2 JPS5336431 B2 JP S5336431B2 JP 11008473 A JP11008473 A JP 11008473A JP 11008473 A JP11008473 A JP 11008473A JP S5336431 B2 JPS5336431 B2 JP S5336431B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11008473A
Other languages
Japanese (ja)
Other versions
JPS4972182A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247710 external-priority patent/DE2247710C3/de
Application filed filed Critical
Publication of JPS4972182A publication Critical patent/JPS4972182A/ja
Publication of JPS5336431B2 publication Critical patent/JPS5336431B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11008473A 1972-09-28 1973-09-28 Expired JPS5336431B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247710 DE2247710C3 (de) 1972-09-28 Flüssigphasen-Epitaxieverfahren und Vorrichtung zu dessen Durchführung

Publications (2)

Publication Number Publication Date
JPS4972182A JPS4972182A (enrdf_load_stackoverflow) 1974-07-12
JPS5336431B2 true JPS5336431B2 (enrdf_load_stackoverflow) 1978-10-03

Family

ID=5857691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11008473A Expired JPS5336431B2 (enrdf_load_stackoverflow) 1972-09-28 1973-09-28

Country Status (10)

Country Link
US (1) US3880680A (enrdf_load_stackoverflow)
JP (1) JPS5336431B2 (enrdf_load_stackoverflow)
AT (1) AT341579B (enrdf_load_stackoverflow)
BE (1) BE805406A (enrdf_load_stackoverflow)
CA (1) CA1004962A (enrdf_load_stackoverflow)
FR (1) FR2201131B1 (enrdf_load_stackoverflow)
GB (1) GB1433161A (enrdf_load_stackoverflow)
IT (1) IT995486B (enrdf_load_stackoverflow)
LU (1) LU68508A1 (enrdf_load_stackoverflow)
NL (1) NL7313421A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (enrdf_load_stackoverflow) * 1973-11-20 1975-06-30
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US5585305A (en) * 1991-08-29 1996-12-17 Shin-Etsu Handotai Co. Ltd. Method for fabricating a semiconductor device
CN1127749C (zh) * 1997-10-27 2003-11-12 结晶及技术有限公司 具有柱形结构的阴极发光屏及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Also Published As

Publication number Publication date
DE2247710B2 (de) 1977-05-05
DE2247710A1 (de) 1974-04-11
CA1004962A (en) 1977-02-08
FR2201131A1 (enrdf_load_stackoverflow) 1974-04-26
BE805406A (fr) 1974-03-27
US3880680A (en) 1975-04-29
NL7313421A (enrdf_load_stackoverflow) 1974-04-01
FR2201131B1 (enrdf_load_stackoverflow) 1977-03-11
LU68508A1 (enrdf_load_stackoverflow) 1974-04-02
JPS4972182A (enrdf_load_stackoverflow) 1974-07-12
AT341579B (de) 1978-02-10
GB1433161A (en) 1976-04-22
IT995486B (it) 1975-11-10
ATA692873A (de) 1977-06-15

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