CA1004962A - Liquid zone epitaxy process - Google Patents

Liquid zone epitaxy process

Info

Publication number
CA1004962A
CA1004962A CA182,057A CA182057A CA1004962A CA 1004962 A CA1004962 A CA 1004962A CA 182057 A CA182057 A CA 182057A CA 1004962 A CA1004962 A CA 1004962A
Authority
CA
Canada
Prior art keywords
liquid zone
epitaxy process
epitaxy
zone
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA182,057A
Other languages
English (en)
Other versions
CA182057S (en
Inventor
Gunter Winstel
Claus Weyrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247710 external-priority patent/DE2247710C3/de
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1004962A publication Critical patent/CA1004962A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA182,057A 1972-09-28 1973-09-27 Liquid zone epitaxy process Expired CA1004962A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247710 DE2247710C3 (de) 1972-09-28 Flüssigphasen-Epitaxieverfahren und Vorrichtung zu dessen Durchführung

Publications (1)

Publication Number Publication Date
CA1004962A true CA1004962A (en) 1977-02-08

Family

ID=5857691

Family Applications (1)

Application Number Title Priority Date Filing Date
CA182,057A Expired CA1004962A (en) 1972-09-28 1973-09-27 Liquid zone epitaxy process

Country Status (10)

Country Link
US (1) US3880680A (enrdf_load_stackoverflow)
JP (1) JPS5336431B2 (enrdf_load_stackoverflow)
AT (1) AT341579B (enrdf_load_stackoverflow)
BE (1) BE805406A (enrdf_load_stackoverflow)
CA (1) CA1004962A (enrdf_load_stackoverflow)
FR (1) FR2201131B1 (enrdf_load_stackoverflow)
GB (1) GB1433161A (enrdf_load_stackoverflow)
IT (1) IT995486B (enrdf_load_stackoverflow)
LU (1) LU68508A1 (enrdf_load_stackoverflow)
NL (1) NL7313421A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080280A (enrdf_load_stackoverflow) * 1973-11-20 1975-06-30
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
JPS5222478A (en) * 1975-08-11 1977-02-19 Siemens Ag Liquiddphase epitaxial method
JPS52115783A (en) * 1976-03-24 1977-09-28 Sumitomo Electric Ind Ltd Liquid phase epitaxial growth
US4160682A (en) * 1978-03-30 1979-07-10 Western Electric Co., Inc. Depositing materials on stacked semiconductor wafers
JPS5575998A (en) * 1978-12-04 1980-06-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growing method
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US5585305A (en) * 1991-08-29 1996-12-17 Shin-Etsu Handotai Co. Ltd. Method for fabricating a semiconductor device
CN1127749C (zh) * 1997-10-27 2003-11-12 结晶及技术有限公司 具有柱形结构的阴极发光屏及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Also Published As

Publication number Publication date
DE2247710B2 (de) 1977-05-05
DE2247710A1 (de) 1974-04-11
FR2201131A1 (enrdf_load_stackoverflow) 1974-04-26
BE805406A (fr) 1974-03-27
US3880680A (en) 1975-04-29
NL7313421A (enrdf_load_stackoverflow) 1974-04-01
FR2201131B1 (enrdf_load_stackoverflow) 1977-03-11
LU68508A1 (enrdf_load_stackoverflow) 1974-04-02
JPS4972182A (enrdf_load_stackoverflow) 1974-07-12
AT341579B (de) 1978-02-10
GB1433161A (en) 1976-04-22
IT995486B (it) 1975-11-10
JPS5336431B2 (enrdf_load_stackoverflow) 1978-10-03
ATA692873A (de) 1977-06-15

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